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Teilenummer | CJP12N60 |
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Beschreibung | N-Channel MOSFET | |
Hersteller | JCET | |
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Gesamt 2 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate MOSFETS
CJP12N60 600V N-Channel Power MOSFET
General Description
This advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching performance, and withistand
high energy pulse in the avalanche and commutation mode. These devices
are well suited for high efficiency switch mode power supply.
TO-220
1. GATE
2. DRAIN
3. SOURCE
FEATURE
z Low Crss
z Fast switching
z Improved dv/dt capability
D
!
"
!"
G!
"
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!
S
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Single Pulsed Avalanche Energy (note1)
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating Temperature
Storage Temperature
Symbol
VDS
VGS
ID
EAS
PD
RθJA
TJ
TSTG
Value
600
±30
12
790
2
62.5
150
-55 ~+150
Unit
V
A
mJ
W
℃
A,Dec,2010
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ CJP12N60 Schematic.PDF ] |
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