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Teilenummer | CJLJF3117P |
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Beschreibung | P-Channel MOSFET | |
Hersteller | JCET | |
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Gesamt 4 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2*2-6L-A Plastic-Encapsulate MOSFETS
CJLJF3117P P-Channel Power MOSFET
FEATURE
Featuring a MOSFET and Schottky Diode
Independent Pinout Privides Circuit Design Flexibility
Low Profile (<0.8mm) for Easy Fit in Thin Environment
High Current Schottky Diode
DFNWB2*2-6L-A
APPLICATIONS
Optimized for Portable Applications like Cell Phones , Digital Cameras,
Media Players, etc
DC-DC Buck Circuits
Li-ion Battery Applications
Color Display and Camera Flash Regulators
MARKING:
front
Tape Drawing (Unit : mm)
back
MOSFET MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
ID -3.3
Power Dissipation
PD 0.75
Thermal Resistance from Junction to Ambient
Maximum Power Dissipation*
Thermal Resistance from Junction to Ambient *
RθJA
PD
RθJA
167
1.5
83.3
Storage Temperature
Tj 150
Junction Temperature
Tstg -55 ~+150
*Maximum power dissipation is calculated assuming that the device is mounted on infinite heat sink.
Unit
V
A
W
℃/W
W
℃/W
℃
B,Nov,2012
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CJLJF3117P Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
CJLJF3117P | P-Channel MOSFET | JCET |
CJLJF3117PB | P-channel MOSFET and Schottky Barrier Diode | JCET |
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