(PDF) CJL8820 Datasheet - Dual N-Channel MOSFET

Número de pieza	CJL8820
Descripción	Dual N-Channel MOSFET
Fabricantes	JCET
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8820 V(BR)DSS 20V Dual N-Channel MOSFET RDS(on)MAX 21mΩ@10V 24mΩ @4.5V 28 mΩ@3.8V 32mΩ@2.5V 50mΩ@1.8V ID 7A DESCRIPTION The CJL8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. MARKING: Equivalent Circuit SOT-23-6L MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(note1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) Repetitive rating：Pluse width limited by junction temperature. Symbol VDS VGS ID IDM RθJA Tj Tstg TL www.cj-elec.com 1 Value 20 ±12 7 25 125 150 -55~+150 260 Unit V V A A ℃/W ℃ ℃ ℃ E,Oct,2014 1 page 627-6L7DSHDQG5HHO ZZZFMHOHFFRP EOct 5 Page

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PDF CJL8820 Data sheet ( Hoja de datos )