(PDF) CJL818C Datasheet - PNP Transistor

Número de pieza	CJL818C
Descripción	PNP Transistor
Fabricantes	JCET
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-6L Plastic-Encapsulate Transistors CJL818C TRANSISTOR (PNP) DESCRIPTIONS The device is manufactured in low voltage PNP Planar Technology with "Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. SOT-23-6L FEATURE Very low collector to emitter saturation voltage APPLICATIONS z Power management in portable equipments z Switching regulator in battery charge applications MARKING: 6 818C 1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous ICM Collector Current -Pulsed PC Collector Power Dissipation RθJA Thermal Resistance from Junction to Ambient Ptot Total Dissipation at TC = 25℃ (note 1) RθJC Thermal Resistance from Junction to Case (note 1) TJ Junction Temperature Tstg Storage Temperature Note 1：Package mounted on FR4 PCB 25mm x 25mm. Value -30 -30 -5 -2 -3 0.35 357 1 125 150 -55~+150 Unit V V V A A W ℃/W W ℃/W ℃ ℃ A,Feb,2014 1 page

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PDF CJL818C Data sheet ( Hoja de datos )