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PDF CD4012BMS Data sheet ( Hoja de datos )

Número de pieza CD4012BMS
Descripción CMOS NAND Gates
Fabricantes Intersil Corporation 
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No Preview Available ! CD4012BMS Hoja de datos, Descripción, Manual

CD4011BMS, CD4012BMS
CD4023BMS
November 1994
CMOS NAND Gates
Features
Pinouts
• High-Voltage Types (20V Rating)
• Propagation Delay Time = 60ns (typ.) at CL = 50pF,
VDD = 10V
• Buffered Inputs and Outputs
• Standardized Symmetrical Output Characteristics
• Maximum Input Current of 1µA at 18V Over Full Package-
Temperature Range; 100nA at 18V and +25oC
• 100% Tested for Maximum Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
• Noise Margin (Over Full Package Temperature Range):
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
CD4011BMS
TOP VIEW
A1
B2
J = AB 3
K = CD 4
C5
D6
VSS 7
14 VDD
13 H
12 G
11 M = GH
10 L = EF
9E
8F
CD4012BMS
TOP VIEW
• Meets All Requirements of JEDEC Tentative Stan-
dards No. 13B, “Standard Specifications for Descrip-
tion of “B” Series CMOS Device’s
Description
CD4011BMS - Quad 2 Input
CD4012BMS - Dual 4 Input
CD4023BMS - Triple 3 Input
CD4011BMS, CD4012BMS, and CD4023BMS NAND gates
provide the system designer with direct implementation of
the NAND function and supplement the existing family of
CMOS gates. All inputs and outputs are buffered.
J = ABCD 1
A2
B3
C4
D5
NC 6
VSS 7
14 VDD
13 K = EFGH
12 H
11 G
10 F
9E
8 NC
NC = NO CONNECTION
CD4023BMS
TOP VIEW
The CD4011BMS, CD4012BMS and the CD4023BMS is
supplied in these 14 lead outline packages:
CD4011B
CD4012B
CD4023B
Braze Seal DIP
Frit Seal DIP
Ceramic Flatpack
H4Q
H1B
H3W
H4H
H1B
H3W
H4Q
H1B
H3W
A1
B2
D3
E4
F5
K = DEF 6
VSS 7
14 VDD
13 G
12 H
11 I
10 L = GHI
9 J = ABC
8C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-53
File Number 3079

1 page




CD4012BMS pdf
Specifications CD4011BMS, CD4012BMS, CD4023BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
Transition Time
Input Capacitance
SYMBOL
CONDITIONS
TTHL
TTLH
VDD = 10V
VDD = 15V
CIN Any Input
NOTES
1, 2, 3
1, 2, 3
1, 2
TEMPERATURE
+25oC
+25oC
+25oC
MIN
-
-
-
MAX
100
80
7.5
UNITS
ns
ns
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
N Threshold Voltage
N Threshold Voltage
Delta
P Threshold Voltage
P Threshold Voltage
Delta
Functional
Propagation Delay Time
SYMBOL
CONDITIONS
IDD VDD = 20V, VIN = VDD or GND
VNTH VDD = 10V, ISS = -10µA
VNTH VDD = 10V, ISS = -10µA
VPTH VSS = 0V, IDD = 10µA
VPTH VSS = 0V, IDD = 10µA
F
TPHL
TPLH
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
VDD = 5V
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
NOTES
1, 4
1, 4
1, 4
TEMPERATURE
+25oC
+25oC
+25oC
MIN
-
-2.8
-
1, 4
+25oC
0.2
1, 4
+25oC
-
1
1, 2, 3, 4
+25oC
+25oC
VOH >
VDD/2
-
3. See Table 2 for +25oC limit.
4. Read and Record
MAX
2.5
-0.2
±1
2.8
±1
VOL <
VDD/2
1.35 x
+25oC
Limit
UNITS
µA
V
V
V
V
V
ns
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - SSI
Output Current (Sink)
Output Current (Source)
IDD
IOL5
IOH5A
± 0.1µA
± 20% x Pre-Test Reading
± 20% x Pre-Test Reading
CONFORMANCE GROUP
Initial Test (Pre Burn-In)
Interim Test 1 (Post Burn-In)
Interim Test 2 (Post Burn-In)
PDA (Note 1)
Interim Test 3 (Post Burn-In)
PDA (Note 1)
Final Test
Group A
TABLE 6. APPLICABLE SUBGROUPS
MIL-STD-883
METHOD
GROUP A SUBGROUPS
100% 5004
1, 7, 9
100% 5004
1, 7, 9
100% 5004
1, 7, 9
100% 5004
1, 7, 9, Deltas
100% 5004
1, 7, 9
100% 5004
1, 7, 9, Deltas
100% 5004
2, 3, 8A, 8B, 10, 11
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
READ AND RECORD
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
7-57

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