|
|
PDF EM6AB160 Data sheet ( Hoja de datos )
| Número de pieza | EM6AB160 | |
| Descripción | 32M x 16 bit DDR Synchronous DRAM | |
| Fabricantes | Etron Technology | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EM6AB160 (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
|
No Preview Available !
EtronTech
EM6AB160
32M x 16 bit DDR Synchronous DRAM (SDRAM)
Advance (Rev. 1.3, Jun. /2015)
Features
• Fast clock rate: 250/200MHz
• Differential Clock CK & CK
• Bi-directional DQS
• DLL enable/disable by EMRS
• Fully synchronous operation
• Internal pipeline architecture
• Four internal banks, 8M x 16-bit for each bank
• Programmable Mode and Extended Mode registers
- CAS Latency: 2, 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
• Individual byte write mask control
• DM Write Latency = 0
• Auto Refresh and Self Refresh
• 8192 refresh cycles / 64ms
• Precharge & active power down
• Power supplies: VDD & VDDQ = 2.5V 0.2V
• Operating Temperature: TA = 0~70°C
• Interface: SSTL_2 I/O Interface
• Package: 66 Pin TSOP II, 0.65mm pin pitch
- Pb and Halogen free
• Package: 60-Ball, 8x13x1.2 mm (max) FBGA
- Pb free and Halogen Free
Overview
The EM6AB160 SDRAM is a high-speed CMOS double
data rate synchronous DRAM containing 512 Mbits. It is
internally configured as a quad 8M x 16 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal, CK). Data outputs
occur at both rising edges of CK and CK . Read and
write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for a
programmed number of locations in a programmed
sequence. Accesses begin with the registration of a
BankActivate command which is then followed by a
Read or Write command. The EM6AB160 provides
programmable Read or Write burst lengths of 2, 4, or 8.
An auto precharge function may be enabled to provide
a self-timed row precharge that is initiated at the end of
the burst sequence. The refresh functions, either Auto
or Self Refresh are easy to use. In addition, EM6AB160
features programmable DLL option. By having a
programmable mode register and extended mode
register, the system can choose the most suitable
modes to maximize its performance. These devices are
well suited for applications requiring high memory
bandwidth, result in a device particularly well suited to
high performance main memory and graphics
applications.
Table 1. Ordering Information
Part Number
Clock Frequency Data Rate
EM6AB160TSE-4G
250MHz
500Mbps/pin
EM6AB160TSE-5G
200MHz
400Mbps/pin
EM6AB160WKE-4H
250MHz
500Mbps/pin
EM6AB160WKE-5H
200MHz
400Mbps/pin
TS : indicates TSOPII package
WK: indicates 8x13x1.2 mm FBGA package
E: indicates Generation Code
G: indicates Pb and Halogen free for TSOPII Package
H: indicates Pb and Halogen free for FBGA Package
Package
TSOPII
TSOPII
FBGA
FBGA
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.
1 page  
EtronTech
EM6AB160
VSS
VDDQ
VSSQ
VREF
NC
Supply Ground
Supply DQ Power: 2.5V 0.2V . Provide isolated power to DQs for improved noise immunity.
Supply DQ Ground: Provide isolated ground to DQs for improved noise immunity.
Supply Reference Voltage for Inputs: +0.5*VDDQ
- No Connect: These pins should be left unconnected.
Rev.1.3
5
Jun. /2015
5 Page 
EtronTech
EM6AB160
Table 15. D.C. Characteristics (VDD = 2.5V ± 0.2V, TA = 0~70 °C)
Parameter & Test Condition
Symbol
OPERATING CURRENT:
One bank; Active-Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM
and DQS inputs changing once per clock cycle; Address and control
inputs changing once every two clock cycles.
OPERATING CURRENT:
One bank; BL=4; reads - Refer to the following page for detailed test
conditions
PRECHARGE POWER-DOWN STANDBY CURRENT:
All banks idle; power-down mode; tCK=tCK(min); CKE = LOW
PRECHARGE FLOATING STANDBY CURRENT:
CS = HIGH; all banks idle; CKE = HIGH; tCK =tCK(min); address and
other control inputs changing once per clock cycle; VIN = VREF for
DQ, DQS and DM
PRECHARGE QUIET STANDBY CURRENT:
CS =HIGH; all banks idle; CKE =HIGH; tCK=tCK(min) address and
other control inputs stable at ≥ VIH(min) or ≤ VIL (max); VIN = VREF
for DQ, DQS and DM
ACTIVE POWER-DOWN STANDBY CURRENT : one bank active;
power-down mode; CKE=LOW; tCK=tCK(min)
ACTIVE STANDBY CURRENT : CS =HIGH;CKE=HIGH; one bank
active ; tRC=tRC(max);tCK=tCK(min);Address and control inputs
changing once per clock cycle; DQ,DQS,and DM inputs changing
twice per clock cycle
OPERATING CURRENT BURST READ : BL=2; READS;
Continuous burst; one bank active; Address and control inputs
changing once per clock cycle; tCK=tCK(min); lout=0mA;50% of data
changing on every transfer
OPERATING CURRENT BURST Write : BL=2; WRITES;
Continuous Burst ;one bank active; address and control inputs
changing once per clock cycle; tCK=tCK(min); DQ,DQS,and DM
changing twice per clock cycle; 50% of data changing on every
transfer
AUTO REFRESH CURRENT : tRC=tRFC(min); tCK=tCK(min)
SELF REFRESH CURRENT: Self Refresh Mode ; CKE
0.2V;tCK=tCK(min)
BURST OPERATING CURRENT 4 bank operation:
Four bank interleaving READs; BL=4;with Auto Precharge;
tRC=tRC(min); tCK=tCK(min); Address and control inputs change only
during Active, READ , or WRITE command
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7
-4 -5
Max.
Unit Note
85 80 mA
95 90 mA
5 5 mA
40 35 mA
40 35 mA
20 20 mA
65 65 mA
150 130 mA
150 130 mA
160 140 mA
6 6 mA 1
230 210 mA
Rev.1.3
11
Jun. /2015
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet EM6AB160.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EM6AB160 | 32M x 16 bit DDR Synchronous DRAM | Etron Technology |
| EM6AB160TSA | 32M x 16 bit DDR Synchronous DRAM | Etron Technology |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |