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PDF CJU50N03 Data sheet ( Hoja de datos )

Número de pieza CJU50N03
Descripción N-Channel Power MOSFET / Transistor
Fabricantes JCET 
Logotipo JCET Logotipo



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No Preview Available ! CJU50N03 Hoja de datos, Descripción, Manual

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU50N03
V(BR)DSS
30 V
N-Channel Power MOSFET
RDS(on)MAX
  11mΩ@10V 
16mΩ@5V  
ID
50A
DESCRIPTION
The CJU50N03 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications.
TO-252-2L
1. GATE
2. DRAIN
3. SOURCE
2
1
3
FEATURES
z High density cell design for ultra low RDS(ON)
z Fully characterized Avalanche voltage and current
z Good stability and uniformity with high EAS
z Excellent package for good heat dissipation
z Special process technology for high ESD capability
APPLICATIONS
z Power switching application
z Hard switched and high frequency circuits
z Uninterruptible Power Supply
MARKING
EQUIV ALENT CIRCUIT
CJU50N03
XXX
CJU50N03= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX= Code
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=20V,L=0.5mH, RG=25, Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
30
±20
50
200
70
1.25
100
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
/W
www.cj-elec.com
1
A,Oct,2016

1 page




CJU50N03 pdf
To-252(4R)-2L Tape and Reel
www.cj-elec.com
5
A,Oct,2016

5 Page










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