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Teilenummer | CJQ4406 |
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Beschreibung | N-Channel Power MOSFET / Transistor | |
Hersteller | JCET | |
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Gesamt 5 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4406 N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
12mΩ@10V
30 V
16mΩ@4.5V
ID
10A
DESCRIPTION
The CJQ4406 uses advanced trench technology to provide excellent R DS(ON)
with low gate charge. This device is suitable for high side switch in SMPS and
general purpose applications.
APPLICATIONS
z High side switch in SMPS
z Load Switch
SOP8
MARKING
Front side
Q4406= Device code
Solid dot=Pin1 indicator
Solid dot = Green molding compound device,
if none, the normal device
YY=Date Code
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
Equivalent Circuit
D DDD
8 7 65
1 234
S S SG
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
30
±20
10
40
105
1.4
89
150
-55 ~+150
260
www.cj-elec.com
1
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
A-3,Feb,2016
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ CJQ4406 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
CJQ4406 | N-Channel Power MOSFET / Transistor | JCET |
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