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CJD05N60B Schematic ( PDF Datasheet ) - ZPSEMI

Teilenummer CJD05N60B
Beschreibung N-Channel Power MOSFET / Transistor
Hersteller ZPSEMI
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Gesamt 2 Seiten
CJD05N60B Datasheet, Funktion
CJD05N60B
TO-251S Plastic-Encapsulate MOSFETS
CJD05N60B N-Channel Power MOSFET
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
FEATURE
z High Current Rating
z Lower RDS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
TO-251S
1. GATE
2. DRAIN
3. SOURCE
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
Duration 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
PD
RθJA
TJ, TSTG
TL
Value
600
±30
5
20
250
1.25
100
-55 ~+150
260
Unit
V
A
mJ
W
/W
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