CJD04N65 Datasheet PDF - ZPSEMI
| Part Number | CJD04N65 | |
| Description | N-Channel Power MOSFET / Transistor | |
| Manufacturers | ZPSEMI | |
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There is a preview and CJD04N65 download ( pdf file ) link at the bottom of this page. Total 3 Pages | ||
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CJD04N65
TO-251S Plastic-Encapsulate MOSFETS
CJD04N65 N-Channel Power MOSFET
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
FEATURE
z High Current Rating
z Lower RDS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
TO-251S
1. GATE
2. DRAIN
3. SOURCE
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
PD
RθJA
TJ, TSTG
TL
Value
650
±30
4.0
16
280
1.25
100
-55 ~+150
260
Unit
V
A
mJ
W
℃/W
℃
www.zpsemi.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for CJD04N65 electronic component. |
| Information | Total 3 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ CJD04N65.PDF Datasheet ] | |
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