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CJD04N60 Schematic ( PDF Datasheet ) - ZPSEMI

Teilenummer CJD04N60
Beschreibung N-Channel Power MOSFET / Transistor
Hersteller ZPSEMI
Logo ZPSEMI Logo 




Gesamt 4 Seiten
CJD04N60 Datasheet, Funktion
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-2516Plastic-Encapsulate MOSFETS
CJD04N60 600V N-Channel Power MOSFET
V(BR)DSS
600V
RDS(on)MAX
  3.0Ω@10V
ID
4A
TO-251S
 
General Description
This advanced high voltage MOSFET is designed to wighstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode wigh fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor controls
and bridge circuits.
1. GATE
2. DRAIN
3. SOURCE
1 23
FEATURE
z High Current Rating
z Lower Rds(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJD044N60
z XXX
CJD04N60 = Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain-Source Diode Forward Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance fromJunction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGSS
ID
IS
EAS
RθJA
TJ, TSTG
TL
Value
600
±30
4.0
4.0
260
100
-55 ~+150
260
Unit
V
A
mJ
/W
www.cj-elec.com
1
E,May,2016





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