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PDF CJD01N60 Data sheet ( Hoja de datos )
| Número de pieza | CJD01N60 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ZPSEMI | |
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CJD01N60
TO-251-3L Plastic-Encapsulate MOSFETS
CJD01N60 N-Channel Power MOSFET
General Description
The high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage-blocking capability without degrading
performance over time. In addition , this advanced MOSFET is designed
to withstand high energy in avalanche and commutation modes . The
new energy efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power suppliers, converters and PWM motor controls ,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage transients.
TO-251-3L
1. GATE
2. DRAIN
3. SOURCE
1
123
FEATURES
z Robust High Voltage Termination
z Avalanche Energy Specified
z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
z Diode is Characterized for Use in Bridge Circuits
z IDSS and VDS(on) Specified at Elevated Temperature
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Single Pulse Avalanche Energy (note 1)
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
EAS
ID
PD
RθJA
TJ
TSTG
Value
600
±20
20
1
1
125
150
-50 ~+150
Unit
V
mJ
A
W
℃/W
℃
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| PDF Descargar | [ Datasheet CJD01N60.PDF ] | |
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