(PDF) CJ8820 Datasheet - N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CJ8820
Descripción	N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	ZPSEMI
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No Preview Available ! CJ8820 SOT-23 Plastic-Encapsulate MOSFETS CJ8820 N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The CJ8820 use advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-source voltage VDS Gate-source voltage VGS Continuous drain current (t ≤10s) ID Pulsed drain current * IDM Power dissipation PD Thermal resistance from junction to ambient RθJA Junction temperature TJ Storage temperature Tstg * Repetitive rating : Pulse width limited by junction temperature. Value 20 ±12 7 25 0.3 417 150 -55~ 150 Units V V A A W ℃/W ℃ ℃ [email protected] www.zpsemi.com 1 of 3 1 page

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PDF CJ8820 Data sheet ( Hoja de datos )