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Teilenummer | CGHV59070 |
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Beschreibung | RF Power GaN HEMT | |
Hersteller | Cree | |
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Gesamt 10 Seiten PRELIMINARY
CGHV59070
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT
Cree’s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor
(HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband
solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed
amplifier circuits. The transistor is available in a flange and pill package.
PNP’sa: cCkGaHgeV5T9y0p7e:04F,4C0G22H4V,5494007107P0
Typical Performance Over 4.8 - 5.9 GHz (TC = 25˚C)
Parameter
4.8 GHz 5.0 GHz 5.2 GHz 5.4 GHz 5.6 GHz
Power Gain at 50 V
13.7 14.2 14.5 14.6 14.3
Output Power at 50 V
84
93 101 102 95
Drain Efficiency at 50 V
55
56
57
56
54
Note: Measured in CGHV59070F-AMP (838269) under 100 µS pulse width,10% duty, Pin = 35.5 dBm (3.5 W)
5.8 GHz
13.7
84
50
5.9 GHz
13.3
76
48
Units
dB
W
%
Features
• 4.4 - 5.9 GHz Operation
• 90 W POUT typical at 50 V
• 14 dB Power Gain
• 55 % Drain Efficiency
• Internally Matched
Applications
• Marine Radar
• Weather Monitoring
• Air Traffic Control
• Maritime Vessel Traffic Control
• Port Security
• Troposcatter Communications
• Beyond Line of Sight - BLOS
• Satellite Communications
Subject to change without notice.
www.cree.com/rf
1
CGHV59070-AMP Demonstration Amplifier Circuit Schematic
CGHV59070-AMP Demonstration Amplifier Circuit Outline
Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6 CGHV59070 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ CGHV59070 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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