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Teilenummer | CGHV14800 |
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Beschreibung | GaN HEMT | |
Hersteller | Cree | |
Logo | ||
Gesamt 9 Seiten CGHV14800
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed
specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the
CGHV14800 ideal for 1.2 - 1.4 GHz pulsed L-Band radar amplifier applications, such as air traffic
control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking
radars and long range survelliance radars. The GaN HEMT typically operates at 50 V, typically
deliverying >65% drain efficiency. The package options are ceramic/metal flange package.
Package
PN:
CTGypHeV: 1444800101F7
Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.2 GHz
1.25 GHz
1.3 GHz
1.35 GHz
Output Power
900 900 870 870
Power Gain
14.5
14.5
14.0
14.0
Drain Efficiency
68 67 67 63
Note:
Measured in the CGHV14800-AMP amplifier circuit, under 3 μs pulse width, 3% duty cycle, PIN = 45 dBm.
1.4 GHz
920
14.0
62
Units
W
dB
%
Features
• Reference design amplifier 1.2 - 1.4 GHz Operation
• 800 W Minimum Output Power
• 14 dB Power Gain
• 69% Typical Drain Efficiency
• <0.3 dB Pulsed Amplitude Droop
• Internally input and output matched
Subject to change without notice.
www.cree.com/rf
1
Product Dimensions CGHV14800F (Package Type — 440117)
Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6 CGHV14800 Rev 0.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ CGHV14800 Schematic.PDF ] |
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