8N65F Schematic ( Datenblatt PDF ) - CHONGQING PINGYANG

		


8N65(F,B,H)
8A mps,650 Volts N-CHANNEL MOSFET
FEATURE
 8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A
 Low gate charge
 Low Ciss
 Fast switching
 100% avalanche tested
 Improved dv/dt capability
TO-220AB
8N65
ITO-220AB
8N65F
TO-263
8N65B
TO-262
8N65H
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
8N65
650
±30
8
32
550
8
21
5.5
-55 to +150
260
10
1.1
UNIT
V
A
mJ
A
mJ
V/ns
℃
℃
lbf·in
N·m
Thermal Characteristics
Parameter
Maximum Junction-to-Case
Maximum Power Dissipation
TC=25℃
Symbol
RthJC
PD
ITO-220
1.0
125
- 页码 -
TO-220
0.8
155
TO-262
TO-263
0.8
155
Units
℃/W
W
Rev. 14-1
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