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8N60 Schematic ( Datenblatt PDF ) - nELL

Teilenummer 8N60
Beschreibung N-Channel Power MOSFET
Hersteller nELL
Logo nELL Logo 

Gesamt 7 Seiten
		
8N60 Datasheet, Funktion
SEMICONDUCTOR
8N60 Series RRooHHSS
Nell High Power Products
DESCRIPTION
N-Channel Power MOSFET
(8A, 600Volts)
The Nell 8N60 is a three-terminal silicon
device with current conduction capability of 8A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 600V ,and max.
threshold voltage of 4 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
FEATURES
RDS(ON) = 1.2Ω @ VGS = 10V
Ultra low gate charge(36nC max.)
Low reverse transfer capacitance
(CRSS = 12pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
PRODUCT SUMMARY
ID (A)
8
VDSS (V)
600
RDS(ON) (Ω)
1.2 @ VGS = 10V
QG(nC) max.
36
D
GDS
TO-220AB
(8N60A)
D
G
S
TO-263(D2PAK)
(8N60H)
GDS
TO-220F
(8N60AF)
D (Drain)
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
Drain to Source voltage
Drain to Gate voltage
TJ=25°C to 150°C
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
IAR=8A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
IAS=8A, L=7.1mH
dv/dt
Peak diode recovery dv/dt(Note 3)
PD Total power dissipation
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS = 8A, VDD = 50V, L = 7.1mH, RGS = 25Ω, starting TJ=25°C.
3.ISD ≤ 7.5A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ=25°C.
TO-220AB/TO-263
TC=25°C
TO-220F
1.6mm from case
www.nellsemi.com
Page 1 of 7
VALUE
600
600
±30
8
5
32
8
14.7
230
4.5
150
48
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W
ºC
lbf.in (N.m)






8N60 Datasheet, Funktion
SEMICONDUCTOR
Fig.3A Gate charge test circuit
8N60 Series RRooHHSS
Nell High Power Products
Fig.3B Gate charge waveform
Same Type as
12V 50kΩ D.U.T.
0.2µF
0.3µF
VDS
VGS
3mA
D.U.T.
VGS
10V
QGS
QG
QGD
Charge
Fig.4A Unclamped lnductive switching test circuit
Fig.4B Unclamped lnductive switching
waveforms
10V
RG
tp
VDS
L
D.U.T.
VDD
BVDSS
lAS
VDD
lD(t)
tp
VDS(t)
Time
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
4.06 (0.160)
3.56 (0.140)
PIN
123
16.13 (0.635)
15.87 (0.625)
3.68 (0.145)
3.43 (0.135)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
14.22 (0.560)
13.46 (0.530)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
15.32 (0.603)
14.55 (0.573)
2.79 (0.110)
2.54 (0.100)
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