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N01S830HA Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer N01S830HA
Beschreibung 1 Mb Ultra-Low Power Serial SRAM
Hersteller ON Semiconductor
Logo ON Semiconductor Logo 




Gesamt 13 Seiten
N01S830HA Datasheet, Funktion
N01S830HA, N01S830BA
1 Mb Ultra-Low Power
Serial SRAM
Standard SPI Interface and Multiplex
DUAL and QUAD Interface
Overview
The ON Semiconductor serial SRAM family includes several
integrated memory devices including this 1 Mb serially accessed
Static Random Access Memory, internally organized as 128 K words
by 8 bits. The devices are designed and fabricated using
ON Semiconductor’s advanced CMOS technology to provide both
high-speed performance and low power. The devices operate with a
single chip select (CS) input and use a simple Serial Peripheral
Interface (SPI) protocol. In SPI mode, a single data-in (SI) and
data-out (SO) line is used along with the clock (SCK) to access data
within the device. In DUAL mode, two multiplexed data-in/data-out
(SIO0-SIO1) lines are used and in QUAD mode, four multiplexed
data-in/data-out (SIO0-SIO3) lines are used with the clock to access
the memory. The devices can operate over a wide temperature range of
−40°C to +85°C (+125°C for E−Temp) and are available in a 8-lead
TSSOP package. The N01S830xA device has two different variations,
a HOLD version that allows communication to the device to be paused
and a battery back-up (BBU) version to be used with a battery to retain
data when power is lost.
Features
Power Supply Range: 2.5 to 5.5 V
Very Low Typical Standby Current < 4 mA at +85°C
Very Low Operating Current < 10 mA
Simple Serial Interface
Single-bit SPI Access
DUAL-bit and QUAD-bit SPI-like Access
Flexible Operating Modes
Word Mode
Page Mode
Burst Mode (Full Array)
High Frequency Read and Write Operation
Clock Frequency up to 20 MHz
Functional Options
HOLD Pin for Pausing Operation
VBAT Pin for Battery−Back up
Built-in Write Protection (CS High)
High Reliability
Unlimited Write Cycles
Temperature Ranges Supported
Industrial (I): TA = −40°C to +85°C
Automotive (E): TA = −40°C to +125°C
These Devices are Pb−Free and are RoHS Compliant
Green TSSOP
www.onsemi.com
TSSOP8 3x4.4
CASE 948BH
PACKAGE CONFIGURATION
CS
SO / SIO1
NC / SIO2
VSS
18
27
36
45
HOLD Version
VCC
HOLD / SIO3
SCK
SI / SIO0
CS
SO / SIO1
NC
VSS
18
27
36
45
BBU Version
VCC
VBAT
SCK
SI / SIO0
ORDERING INFORMATION
Device
Package
Shipping
N01S830HAT22I
N01S830BAT22I
N01S830HAT22IT
N01S830BAT22IT
TSSOP−8
(Pb−Free)
100 Units / Tube
TSSOP−8
(Pb−Free)
3000 / Tape
& Reel
N01S830HAT22E
N01S830BAT22E
TSSOP−8
(Pb−Free)
100 Units / Tube
N01S830HAT22ET TSSOP−8
N01S830BAT22ET (Pb−Free)
3000 / Tape
& Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
February, 2016 − Rev. 2
1
Publication Order Number:
N01S830HA/D






N01S830HA Datasheet, Funktion
N01S830HA, N01S830BA
CS
SCK 0 1 2 3 4 5 6 7 8 9 10 11 29 30 31 32 33 34 35 36 37 38 39
Instruction
24−bit address
Data In to ADDR 1
SI 0 0 0 0 0 0 1 0 23 22 21 20
21076543210
ADDR 1
SO High−Z
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
Data In to ADDR 2
Data In to ADDR 3
Data In to ADDR n
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 ... 7 6 5 4 3 2 1 0
High−Z
Figure 6. SPI Write Sequence
CS
SCK
012345
12 13 14 15 16 17 18 19 20 21
Instruction
24−bit address
Data in
SIO1:0] C3 C2 C1 C0 A11 A10 A3 A2 A1 A0 H0 H0 L0 L0 H1 H1
MSB
MSB
Notes:
C[3:0] = 02h
H0 = 2 high order bits of data byte 0
L0 = 2 low order bits of data byte 0
H1 = 2 high order bits of data byte 1
L1 = 2 low order bits of data byte 1
Figure 7. DUAL Write Sequence
Ln Ln
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6

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N01S830HA pdf, datenblatt
N01S830HA, N01S830BA
CS
SCK
tCSS
tSU
tR
tHD
SI0 MSB in
tF tCSH
LSB in
Figure 19. QUAD Input Timing
tCSD
tCLD
tSCS
CS
SCK
SIO
tLO tHI
tV
MSB out
Figure 20. QUAD Output Timing
tCSH
LSB out
tDIS
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