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Teilenummer | CE3512K2 |
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Beschreibung | 12 GHz Super Low Noise FET | |
Hersteller | CEL | |
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Gesamt 8 Seiten RF Low Noise FET
CE3512K2
12 GHz SupEenrteLroawShNorot iDsoecuFmEeTnti/nTitHleoNllaomwe HPelarestic PKG
DESCRIPTION
Super Low Noise and High Gain
Hollow (Air Cavity) Plastic package
FEATURES
Super Low noise figure and high associated gain:
NF = 0.30 dB TYP., Ga = 13.7 dB TYP.
@VDS = 2 V, ID = 10 mA, f = 12 GHz
PACKAGE
Micro-X plastic package
APPLICATIONS
DBS LNB gain-stage, Mix-stage
Low noise amplifier for microwave
communication systems
ORDERING INFORMATION
Part Number
Order Number
CE3512K2
CE3512K2-C1
Package
Micro-X plastic
package
Marking
C5
Description
• Embossed tape 8 mm wide
• Pin 4 (Gate) faces the
perforation side of the tape
• MOQ 10 kpcs/reel
This document is subject to change without notice.
Date Published: July 2016
CDS-0018-05 (Issue A)
1
REVISION HISTORY
Version
CDS-0018-04 (Issue A)
February 12, 2016
CDS-0018-04 (Issue B)
April 27, 2016
CDS-0018-05 (Issue A)
July 29, 2016
Change to current version
Initial datasheet
Updated Marking Information
Updated Specs in “Absolute Maximum Ratings” Table
Added “Typical Characteristics” section (graphs)
Added “S-Parameters” and “Recommended Soldering
Conditions” sections
CE3512K2
Page(s)
N/A
1, 2, 3
2, 4, 5
This document is subject to change without notice.
6
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ CE3512K2 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
CE3512K2 | 12 GHz Super Low Noise FET | CEL |
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