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Número de pieza | CS2N65A3 | |
Descripción | Silicon N-Channel Power MOSFET | |
Fabricantes | Huajing Microelectronics | |
Logotipo | ||
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No Preview Available ! Silicon N-Channel Power MOSFET
CS2N65 A3
○R
General Description:
VDSS
650 V
CS2N65 A3, the silicon N-channel Enhanced ID
2A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
3.9 Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard..
Features:
l Fast Switching
l Low ON Resistance(Rdson≤5Ω)
l Low Gate Charge (Typical Data:9nC)
l Low Reverse transfer capacitances(Typical:6pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified)
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
650
2.0
1.45
8
±30
68
6.4
1.1
5
35
0.28
150,–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 10 20 15V0 1
1 page CS2N65 A3
○R
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
10
1
1.00E-05
1.00E-04
6
PULSE DURATION = 10μs
5
DUTY CYCLE = 0.5%MAX
VDS=30V
4
1.00E-03
1.00E-02
t ,Pulse Width , Seconds
1.00E-01
Figure 6 Maximun Peak Current Capability
8
6
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
ID=2A
ID=1A
3
2 +150℃
ID=0.5A
ID=0.25A
4
+25℃
1
-55℃
0
2345
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
8
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25 ℃
7
2
6 4 6 8 10 12 14
Vgs , Gate to Source Voltage , Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=1A
1.75
6 1.5
VGS=20V
1.25
51
0.75
4
0123
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
4
0.5
-50
Figure
0 50 100 150
Tj, Junction temperature , C
10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESO UR CES HUAJI NG M ICROELECTRONI CS C O., LTD. Pa g e 5 of 1 0 2015 V01
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet CS2N65A3.PDF ] |
Número de pieza | Descripción | Fabricantes |
CS2N65A3 | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
CS2N65A3HY | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
CS2N65A4HY | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
CS2N65A8 | Silicon N-Channel Power MOSFET | HUAJING |
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