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Teilenummer | CHA8610-99F |
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Beschreibung | 15W X Band High Power Amplifier | |
Hersteller | United Monolithic Semiconductors | |
Logo | ||
Gesamt 18 Seiten CHA8610-99F
15W X Band High Power Amplifier
GaN Monolithic Microwave IC
Description
The CHA8610-99F is a two stage High
Power Amplifier operating between 8.5 and
11GHz and providing typically 15W of
saturated output power and 40% of power
added efficiency.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
In
V+
STG1 STG2
V-
Out
Main Features
■ Frequency range: 8.5-11GHz
■ High output power: 15W
■ High PAE: 40%
■ Linear Gain: 24dB
■ DC bias: Vd=30Volt @Id=0.68A
■ Chip size 5.08x2.75x0.1mm
■ Available in bare die
45 50
44 45
43 40
42 35
41 30
40
Pout @ Pin=23dBm
25
39
PAE @ Pin=23dBm
20
38 15
37 10
36 5
35 0
8 8.5 9 9.5 10 10.5 11 11.5
Frequency (GHz)
Pout and PAE versus frequency for Pulsed mode
Main Electrical Characteristics (Pulsed mode)
Tamb.= +25°C; Vd = +30V Pulse width = 25µs Duty cycle = 10%
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
8.5 11 GHz
Gain Linear Gain
24 dB
Pout Output Power
15 W
PAE Associated Power Added Efficiency.
40 %
Ref. : DSCHA86106180 - 28 jun 16
1/18 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA8610-99F
15W X Band High Power Amplifier
Typical Board Measurements (Pulsed mode)
Vd = +30V, Idq = 680mA Pulse width=25µs Duty cycle =10%
Linear Gain versus Frequency (Temp.=-40 & +25 & +85 °C)
30
28
26
24
22
20
18
16 -40 C
+25 C
14 +85 C
12
10
6.5
7.5
8.5
9.5
10.5
11.5
Frequency (GHz)
12.5
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
6.5
Return Losses versus Frequency
S11 @ -40 C
S11 @ +25 C
S11 @ +85 C
S22 @ -40 C
S22 @ +25 C
S22 @ +85 C
7.5 8.5 9.5 10.5 11.5 12.5
Frequency (GHz)
Ref. : DSCHA86106180 - 28 jun 16
6/18 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
6 Page CHA8610-99F
15W X Band High Power Amplifier
Typical Board Measurements (CW mode)
Tamb.= +25°C, Vd = +30V, Id = 450mA
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
8
Drain Current versus Frequency (Pin= -5 & 24 & 27dBm)
Pin=-5dBm
Pin=24dBm
Pin=27dBm
8.5 9 9.5 10 10.5 11
Frequency (GHz)
11.5
Output Power versus Input Power
45
40
35
30 Freq=8.5GHz
Freq=9GHz
Freq=9.5GHz
25 Freq=10GHz
Freq=10.5GHz
20 Freq=11GHz
15
-5 0
5 10 15 20 25 30
Input power (dBm)
Ref. : DSCHA86106180 - 28 jun 16
12/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
12 Page | ||
Seiten | Gesamt 18 Seiten | |
PDF Download | [ CHA8610-99F Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
CHA8610-99F | 15W X Band High Power Amplifier | United Monolithic Semiconductors |
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