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AH128 Schematic ( PDF Datasheet ) - TriQuint

Teilenummer AH128
Beschreibung High Linearity InGaP HBT Amplifier
Hersteller TriQuint
Logo TriQuint Logo 




Gesamt 17 Seiten
AH128 Datasheet, Funktion
Applications
Repeaters
Mobile Infrastructure
WiMAX / WiBro
LTE / WCDMA / EDGE / CDMA
AH128
¼W High Linearity InGaP HBT Amplifier
AH128-89G
Product Features
60 – 3500 MHz
+25 dBm P1dB
+40 dBm Output IP3
16.9 dB Gain at 2140 MHz
115 mA current draw
+5 V Single Supply
MTTF > 100 Years
Lead-free/Green/RoHS-compliant SOT-89 Package
3 Pin SOT-89 Package
Functional Block Diagram
Backside Paddle - GND
Product Description
The AH128 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance across a broad range
with +40 dBm OIP3 and +25 dBm of compressed 1dB
power while drawing 115 mA current. The AH128 is
available in a lead-free/green/RoHS-compliant SOT-89
package. All devices are 100% RF and DC tested.
The AH128 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity, medium
power, and high efficiency are required. Internal biasing
allows the AH128 to maintain high linearity over
temperature and operate directly off a single +5V supply.
This combination makes the device an excellent candidate
for transceiver line cards in current and next generation
multi-carrier 3G base stations.
1
RF IN
23
GND RF OUT / VCC
Pin Configuration
Pin No.
1
3
2
Backside Paddle
Label
RF IN
RF OUT / VCC
GND
GND
Datasheet: Rev. B 02-25-16
© 2015 TriQuint Semiconductor, Inc
Ordering Information
Part No.
Description
AH128-89G ¼ W High Linearity InGaP HBT Amplifier
Standard T/R size = 1000 pieces on a 7” reel
- 1 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com






AH128 Datasheet, Funktion
AH128
¼W High Linearity InGaP HBT Amplifier
Performance Plots - 869 – 960 MHz Reference Design (contd)
Test conditions unless otherwise noted: VCC=+5 V, ICQ = 115mA, Temp=+25 °C, 50 Ω system
Output Average Power vs Input Average Power
T=25°C
25
24
23
22
21
20
19
0
869 MHz
920 MHz
960 MHz
1234
Input Power (dBm)
5
6
ACLR vs. Output Average Power vs. Frequency
T=25°C
-40
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.3 dB @ 0.01% Probability
-45 3.84 MHz BW
-50
-55
-60
-65
10
869 MHz
920 MHz
960 MHz
12 14 16
Output Power (dBm)
18
ACLR vs. Output Average Power vs. Temperature
f=920 MHz
-40
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.3 dB @ 0.01% Probability
-45 3.84 MHz BW
-50
-55
-60
-65
10
+85°C
+25°C
-40°C
12 14 16
Output Power (dBm)
18
8
7
6
5
4
3
2
1
0
0.86
Noise Figure vs. Frequency vs. Temperature
+85°C +25°C -40°C
0.88 0.90 0.92 0.94
Frequency (GHz)
0.96
OIP3 vs. Output Power/Tone vs. Temperature
f=920 MHz, 1 MHz spacing
45
40
35
30
25
8
+85°C
+25°C
-40°C
9 10 11 12 13 14 15 16
Output Power/Tone (dBm)
OIP3 vs. Output Power/Tone vs. Frequency
T=25°C, 1 MHz spacing
45
40
35
30
25
8
869 MHz 920 MHz 960 MHz
9 10 11 12 13 14 15 16
Output Power/Tone (dBm)
45
40
35
30
25
0.86
OIP3 vs. Frequency
T=25°C, 1 MHz spacing, 14 dBm/tone
0.88 0.90 0.92 0.94
Frequency (GHz)
0.96
Datasheet: Rev. B 02-25-16
© 2015 TriQuint Semiconductor, Inc
- 6 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com

6 Page









AH128 pdf, datenblatt
2300 – 2400 MHz Reference Design
AH128
¼W High Linearity InGaP HBT Amplifier
Typical O-FDMA Performance at 25 °C
Frequency (MHz)
Gain
Input Return Loss
Output Return Loss
ACLR (Pout=+15 dBm)
EVM (Pout=+15 dBm)
Output P1dB
Output IP3
(Pout=+10 dBm/tone, Δf=1MHz)
2300
16.0
15
10.4
-49
1.26
+25
+40.0
2350
16.0
27
9.5
-49.3
1.2
+25
2400
15.8
19
8.8
-49.5
1.13
+25
Units
dB
dB
dB
%
dBm
+40.3 +40.0 dBm
Notes:
1. The primary RF microstrip line is 50 .
2. Components shown on the silkscreen but not on the schematic are not
used.
3. 0 jumpers can be replaced with copper trace in target application.
4. The edge of C9 is placed at 245 mils from AH128 RFout pin (31.9 o at 2350
MHz).
5. The edge of R1 is placed at 100 mils from AH128 RFin pin (13.0 o at 2350
MHz).
6. The edge of C10 is placed 80 mils from the edge of R1 (10.4 o at 2350
MHz).
Performance Plots - 2300 – 2400 MHz Reference Design
Test conditions unless otherwise noted: VCC=+5 V, ICQ = 115mA, Temp=+25 °C, 50 Ω system
802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels, 5 MHz Carrier BW
18
17
16
15
14
13
2250
Gain vs. Frequency
T=25°C
2300
2350
2400
Frequency (MHz)
2450
0
-5
-10
-15
-20
-25
-30
2250
Return Loss vs. Frequency
T=25°C
S11 S22
2300
2350
2400
Frequency (MHz)
2450
ACLR vs. Output Average Power
T=25°C
-45
W-CDMA 3GPP Test Model 1+64
DPCH PAR = 9.7 dB @ 0.01%
Probability 3.84 MHz BW
-50
EVM vs. Output Average Power
T=25°C
2.0
802.16-2004 O-FDMA, 64QAM-1/2
1024-FFT, 20 symbols and 30
subchannels, 5 MHz Carrier BW
1.5
OIP3 vs. Output Power/Tone
T=25°C
45
40
-55 1.0 35
-60
-65
8
2300 MHz 2350 MHz 2400 MHz
9 10 11 12 13 14 15 16
Output Power (dBm)
0.5
0.0
8
2300 MHz 2350 MHz 2400 MHz
9 10 11 12 13 14 15 16
Output Power (dBm)
30
25
6
2300 MHz 2350 MHz 2400 MHz
8 10 12 14
Output Power/Tone (dBm)
16
Datasheet: Rev. B 02-25-16
© 2015 TriQuint Semiconductor, Inc
- 12 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com

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