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PDF C3M0065090J Data sheet ( Hoja de datos )
| Número de pieza | C3M0065090J | |
| Descripción | Silicon Carbide Power MOSFET | |
| Fabricantes | Cree | |
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VDS 900 V
C3M0065090J
ID @ 25˚C
35 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on) 65 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3M SiC MOSFET technology
• New low impedance package with driver source pin
• 7mm of creepage distance between drain and source
• High blocking voltage with low On-resistance
• Fast intrinsic diode with low reverse recovery (Qrr)
• Low output capacitance (60pF)
• Halogen free, RoHS compliant
Benefits
• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Increase power density
• Increase system switching frequency
Applications
• Renewable energy
• EV battery chargers
• High voltage DC/DC converters
• Switch Mode Power Supplies
TAB
Drain
1 2 34 5 6 7
G DS S S S S S
Drain
(TAB)
Gate
(Pin 1)
Driver
Source
(Pin 2)
Power
Source
(Pin 3,4,5,6,7)
Part Number
Package
Marking
C3M0065090J
7L D2PAK
C3M0065090J
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage (dynamic)
Gate - Source Voltage (static)
ID Continuous Drain Current
900
-8/+19
-4/+15
35
22
ID(pulse) Pulsed Drain Current
90
EAS Avalanche energy, Single pulse
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
110
113
-55 to
+150
260
Unit Test Conditions
V VGS = 0 V, ID = 100 μA
V AC (f >1 Hz)
V Static
VGS = 15 V, TC = 25˚C
A
VGS = 15 V, TC = 100˚C
A Pulse width tP limited by Tjmax
mJ ID = 22A, VDD = 50V
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Note
Note. 1
Note. 2
Fig. 19
Fig. 22
Fig. 20
1 C3M0065090J Rev. B, 10-2016
1 page  
Typical Performance
-8 -7 -6 -5 -4 -3 -2 -1 0
0
VGS = 0 V
VGS = 5 V
VGS = 10 V
VGS = 15 V
-10
-20
-30
-40
-50
Drain-Source Voltage VDS (V)
Conditions:
TJ = -55 °C
tp < 200 µs
-60
-70
-80
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-8 -7 -6 -5 -4 -3 -2 -1 0
0
VGS = 0 V
-10
-20
VGS = 5 V
VGS = 10 V
VGS = 15 V
-30
-40
-50
Drain-Source Voltage VDS (V)
Conditions:
TJ = 150 °C
tp < 200 µs
-60
-70
-80
Figure 15. 3rd Quadrant Characteristic at 150 ºC
10000
1000
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Ciss
Coss
100
10 Crss
1
0 50 100 150
Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
200
-8 -7 -6 -5 -4 -3 -2 -1 0
0
VGS = 0 V
VGS = 5 V
-10
-20
VGS = 10 V
VGS = 15 V
-30
-40
-50
Drain-Source Voltage VDS (V)
Conditions:
TJ = 25 °C
tp < 200 µs
-60
-70
-80
Figure 14. 3rd Quadrant Characteristic at 25 ºC
30
25
20
15
10
5
0
0 100 200 300 400 500 600 700 800 900 1000
Drain to Source Voltage, VDS (V)
10000
1000
Figure 16. Output Capacitor Stored Energy
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Ciss
100 Coss
10
Crss
1
0 100 200 300 400 500 600 700 800 900
Drain-Source Voltage, VDS (V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 900V)
5 C3M0065090J Rev. B, 10-2016
5 Page | ||
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