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ACE93C66A Schematic ( PDF Datasheet ) - ACE Technology

Teilenummer ACE93C66A
Beschreibung Three-wire Serial EEPROM
Hersteller ACE Technology
Logo ACE Technology Logo 




Gesamt 16 Seiten
ACE93C66A Datasheet, Funktion
ACE93C46A/56A/66A
Three-wire Serial EEPROM
Description
The ACE93C46A/56A/66A series are 1024/2048/4096 bits of serial Electrical Erasable and
Programmable Read Only Memory, commonly known as EEPROM. They are organized as
64/128/256 words of 16 bits each when the ORG pin is connected to VCC (or unconnected) and
128/256/512 words of 8 bits (1 byte) each when the ORG pin is tied to ground. The devices are
fabricated with proprietary advanced CMOS process for low power and low voltage applications.
These devices are available in standard 8-lead DIP, 8-lead JEDEC SOP, 8-lead TSSOP and 8-lead
DFN packages. Our extended VCC range (1.8V to 5.5V) devices enables wide spectrum of
applications.
The ACE93C46A/56A/66A is enabled through the Chip Select pin (CS), and accessed via a 3-wire
serial interface consisting of Data Input (DI), Data Output (DO), and Shift Clock (SCL). Upon receiving
a READ instruction at DI, the address is decoded and the data is clocked out serially on the data
output pin DO. The WRITE cycle is completely self-timed and no separate ERASE cycle is required
before WRITE. The WRITE cycle is only enabled when the part is in the ERASE/WRITE ENABLE
state. Once a device begins its self-timed program procedure, the data out pin (DO) can indicate the
READY/BUSY status by rising chip select (CS).
Features
Standard Voltage and Low Voltage Operation:
ACE 93C46A/56A/66A: VCC = 1.8V to 5.5V
User Selectable Internal Organization:
ACE 93C46A:128 x 8 or 64 x 16
ACE 93C56A:256 x 8 or 128 x 16
ACE 93C66A:512 x 8 or 256 x 16
2 MHz Clock Rate (5V) Compatibility.
Industry Standard 3-wire Serial Interface.
Self-Timed ERASE/WRITE Cycles (5ms max including auto-erase).
Automatic ERAL before WRAL.
Sequential READ Function.
High Reliability: Typical 1 Million Erase/Write Cycle Endurance.
100 Years Data Retention.
Industrial Temperature Range (-40o C to 85o C).
Standard 8-pin DIP/SOP/TSSOP/DFN Pb-free Packages
VER 1.3 1






ACE93C66A Datasheet, Funktion
ACE93C46A/56A/66A
Three-wire Serial EEPROM
(C) ERASE/WRITE DISABLE
To protect against accidental data disturb, the Erase/Write Disable (EWDS) instruction dis ables
all programming modes and should be executed after all programming operations. The
operation of the READ instruction is independent of both the EWEN and EWDS instructions and
can be executed at any time.
(D) ERASE
The Erase (ERASE) instruction programs all bits in the specified memory location to the logical
“1” state. The self-timed erase cycle starts once the ERASE instruction and address are
decoded. The DO pin outputs the READY/BUSY status of the part if CS is brought high after
being kept low for a minimum of 250 ns (tcs). A logic “1” at pin DO indicates that the selected
memory location has been erased, and the part is ready for another instruction.
(E) WRITE
The Write (WRITE) instruction contains the 8 or 16 bits of data to be written into the specified
memory
location. The self-timed programming cycle, twp, starts after the last bit of data is received at
serial
data input pin DI. The DO pin outputs the READY/BUSY status of the part if CS is brought high
after
being kept low for a minimum of 250 ns (ttp). A logic “0” at DO indicates that programming is still
in
progress. A logic “1” indicates that the memory location at the specified address has been written
with the data pattern contained in the instruction and the part is ready for further instructi ons. A
READY/BUSY status cannot be obtained if the CS is brought high after the end of the
self-timed
programming cycle, twp.
(F) ERASE ALL
The Erase All (ERAL) instruction programs every bit in the memory array to the logic “1” state
and is primarily used for testing purposes. The DO pin outputs the READY/BUSY status of the
part if CS is brought high after being kept low for a minimum of 250 ns (tCS). The ERAL
instruction is valid only at VCC = 5.0V ± 10%.
(G) WRITE ALL
The Write All (WRAL) instruction programs all memory locations with the data patterns specified
in the instruction. The DO pin outputs the READY/BUSY status of the part if CS is brought high
after being kept low for a minimum of 250 ns (tCS). The WRAL instruction is valid only at VCC =
5.0V ± 10%.
VER 1.3 6

6 Page









ACE93C66A pdf, datenblatt
Packaging information
DIP-8
ACE93C46A/56A/66A
Three-wire Serial EEPROM
Symbol
A
A1
A2
B
B1
C
D
E
E1
e
L
E2
Dimensions In Millimeters
Min Max
3.710
4.310
0.510
3.200
3.600
0.380
0.570
1.524BSC
0.204
0.360
9.000
9.400
6.200
6.600
7.320
7.920
2.540 (BSC)
3.000
3.600
8.400
9.000
Dimensions In Inches
Min Max
0.146
0.170
0.020
0.126
0.142
0.015
0.022
0.060BSC
0.008
0.014
0.354
0.370
0.244
0.260
0.288
0.312
0.100BSC
0.118
0.142
0.331
0.354
VER 1.3 12

12 Page





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