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PDF ACE7310M Data sheet ( Hoja de datos )
| Número de pieza | ACE7310M | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | ACE Technology | |
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ACE7310M
N-Channel 30-V (D-S) MOSFET
Description
The ACE7310M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a kelvin connection to the source, which may be used to bypass the source inductance.
Features
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications
DC/DC Conversion
Power Routing
Motor Drives
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
ID(A)
30 5.5@ VGS = 10V 21
7.8 @ VGS = 4.5V 17
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulse Drain Current b
TA=25 OC
TA=70 OC
Continuous Drain Current (Diode Continuous) a
Power Dissipation a
TA=25 OC
TA=70 OC
Operating Junction and Storage Temperature Range
Symbol Limit Units
VDS 30 V
VGS ±20 V
21
ID 17.2 A
IDM 80
IS 4.7 A
3.5
PD
W
2
TJ,TSTG -55 to 150 OC
Parameter
Maximum Junction-to-Ambient a
t≦10sec
Steady State
Symbol
RθJA
Maximum
35
81
Units
℃/W
℃/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
1 page  
Packing Information
DFN3*3-8L
ACE7310M
N-Channel 30-V (D-S) MOSFET
MILLIMETERS
INCHES
DIM
MIN
NOM
MAX
MIN
NOM
MAX
A
0.700
0.80
0.900 0.0276 0.0315 0.0354
A1 0.00
0.05 0.000
0.002
b
0.24
0.30
0.35
0.009
0.012
0.014
c
0.10
0.152
0.25
0.004
0.006
0.010
D 3.00 BSC
0.118 BSC
D1 2.35 BSC
0.093 BSC
E 3.20 BSC
0.126 BSC
E1 3.00 BSC
0.118 BSC
E2 1.75 BSC
0.069 BSC
E3 0.575 BSC
0.023 BSC
e 0.65 BSC
0.026 BSC
L
0.30
0.40
0.50
0.0118 0.0157 0.0197
L1 0
0.15 0
0.004
θ1 0° 10° 12 ° 0° 10° 12°
VER 1.1 5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet ACE7310M.PDF ] | |
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