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PDF ACE5212A Data sheet ( Hoja de datos )
| Número de pieza | ACE5212A | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | ACE Technology | |
| Logotipo |  |
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ACE5212A
N-Channel Enhancement Mode MOSFET
Description
The ACE5212A is the N-Channel enhancement mode power field effect transistors are produced using
high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior
switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power
management and other battery powered circuits where high-side switching, low in-line power loss, and
resistance to transients are needed.
Features
• 20V/0.65A, RDS(ON)=380mΩ@VGS=4.5V
• 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
• 20V/0.45A, RDS(ON) =800mΩ@VGS=1.8V
• Super high density cell design for extremely low RDS (ON)
• Exceptional on-resistance and maximum DC current capability
Application
• Drivers : Relays/Solenoids/Lamps/Hammers
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
VER 1.1 1
1 page  
Typical Performance Characteristics
Source-Drain Diode Forward Voltage
ACE5212A
N-Channel Enhancement Mode MOSFET
On-Resistance vs. Gate-to-Source Voltage
VSD-Source-to-Drain Voltage (V)
Threshold Voltage
VGS-Gate-to-Source Voltage (V)
Single Pulse Power (Jumction-to-Ambient)
TJ-Temperature(℃)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to Foot
Square Wave Pulse Duration (sec)
VER 1.1 5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ACE5212A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ACE5212A | N-Channel Enhancement Mode MOSFET | ACE Technology |
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