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Número de pieza | ACE5208 | |
Descripción | P-Channel Power MOSFET | |
Fabricantes | ACE Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ACE5208 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! ACE5208
P-Channel Power MOSFET
Description
The ACE5208 uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with low gate voltage.
This device is suitable for use as a load switching application and a wide variety of other applications.
Features
• Advanced trench MOSFET process technology
• Ultra low on-resistance with low gate charge
Applications
• PWM application
• Load switch
• Battery charge in cellular handset
Absolute Maximum Ratings
Parameter
Symb
ol
Max
Unit
Drain-Source Voltage
Gate-Source Voltage
VDSS -12 V
VGS ±8
Drain Current-Continuous
Drain Current-Pulsed (note 1)
ID
-6
A
IDM -20
Power Dissipation (note 2, TA=25℃)
Maximum Power Dissipation (note 3, TC=25℃)
PD
1.5
W
12
Thermal Resistance from Junction to Ambient (note 4) RθJA
Thermal Resistance from Junction to case (note 4) RθJC
83.3
℃/W
10.4
Junction Temperature
Storage Temperature
TJ
150
℃
TSTG -55~+150
Packaging Type
VER 1.1 1
1 page Packing Information
DFNWB2*2-6L-J Package Outline Dimensions(Umit:mm)
ACE5208
P-Channel Power MOSFET
VER 1.1 5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet ACE5208.PDF ] |
Número de pieza | Descripción | Fabricantes |
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ACE5208 | P-Channel Power MOSFET | ACE Technology |
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