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PDF DMC1018UPD Data sheet ( Hoja de datos )

Número de pieza DMC1018UPD
Descripción COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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Product Summary
Device V(BR)DSS
Q1 12V
Q2 -20V
RDS(ON)
17mΩ @ VGS = 4.5V
25mΩ @ VGS = 2.5V
32mΩ @ VGS = -4.5V
53mΩ @ VGS = -2.5V
DMC1018UPD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
POWERDI
Features and Benefits
ID
TA = +25°C
9.5A
7.8A
-6.9A
-5.4A
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation Complementary Pair Enhancement Mode
MOSFET has been designed to minimize RDS(ON) and yet maintain
superior switching performance. This device is ideal for use in
Notebook battery power management and Loadswitch.
Notebook Battery Power Management
DC-DC Converters
Loadswitch
Mechanical Data
Case: PowerDI5060-8 (Type C)
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish 100% Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram Below
Weight: 0.097 grams (Approximate)
Top View
Pin1
Bottom View
D1 D2
S1
G1 G2
G1
S2
G2
S1 S2
Q1 N-Channel MOSFET Q2 P-Channel MOSFET
Top View
Pin Configuration
D1
D1
D2
D2
Ordering Information (Note 4)
Notes:
Part Number
DMC1018UPD-13
Case
PowerDI5060-8 (Type C)
Packaging
2500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D1 D1 D2 D2
C1018UD
YY WW
= Manufacturer’s Marking
C1018UD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 15 = 2015)
WW = Week (01 - 53)
S1 G1 S2 G2
POWERDI is a registered trademark of Diodes Incorporated.
DMC1018UPD
Document number: DS38533 Rev. 2 - 2
1 of 10
www.diodes.com
March 2016
© Diodes Incorporated

1 page




DMC1018UPD pdf
0.02
0.018
0.016
0.014
0.012
VGS=2.5V, ID=9.8A
0.01
0.008
0.006
VGS=4.5V, ID=11.8A
0.004
0.002
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation with Junction
Temperature
30
VGS=0V
25
20
15
10
5
0
0
8
TA=150
TA=125
TA=85
TA=25
TA=-55
0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
1.5
6
4
VDS=6V, ID=11.8A
2
0
0 5 10 15 20 25 30 35
Qg (nC)
Figure 11. Gate Charge
DMC1018UPD
1.2
1
0.8 ID=1mA
0.6 ID=250μA
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Threshold Variation vs Junction
Temperature
10000
f=1MHz
Ciss
1000
Coss
Crss
100
10
0 2 4 6 8 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
100
RDS(ON)
Limited
PW=10μs
12
10 PW=100μs
PW=1ms
PW=10ms
PW=100ms
1 TJ(Max)=150
TC=25
Single Pulse
PW=1s
DUT on Infinite Heatsink
VGS=4.5V
0.1
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
POWERDI is a registered trademark of Diodes Incorporated.
DMC1018UPD
Document number: DS38533 Rev. 2 - 2
5 of 10
www.diodes.com
March 2016
© Diodes Incorporated

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