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Teilenummer | ADDR1333C4G9 |
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Beschreibung | Memory Module | |
Hersteller | ADATA | |
Logo | ||
Gesamt 16 Seiten ADDR1333C4G9
DDR3-1333(CL9) 240-Pin R-DIMM
4GB(512M x 72-bits)
ADATA Technology Corp.
Memory Module Data Sheet
DDR3-1333(CL9) 240-Pin R-DIMM 4GB
(512M x 72-bits)
Version 2.0
Document Number : R11-0780
1
34 DQS3 74
/CAS
114
35
VSS
75
VDD
115
36
DQ26
76
/S1,NC
116
37 DQ27 77 ODT1,NC 117
38
VSS
78
VDD
118
39 NC,CB0 79
NC 119
40 NC,CB1 80
VSS
120
DQ58
DQ59
VSS
SA0
SCL
SA2
VTT
ADDR1333C4G9
DDR3-1333(CL9) 240-Pin R-DIMM
4GB(512M x 72-bits)
154
VSS
194
155
DQ30
195
156
DQ31
196
157
VSS
197
158 NC,CB4 198
159 NC,CB5 199
160
VSS
200
VDD
ODT0
A13
VDD
NC
VSS
DQ36
234 DQ63
235 VSS
236 VDDSPD
237 SA1
238 SDA
239 VSS
240 VTT
6
6 Page ADDR1333C4G9
DDR3-1333(CL9) 240-Pin R-DIMM
4GB(512M x 72-bits)
IDD Specification:
Symbol
Condition
Typical
IDD0
Operating One Bank Active-Precharge Current
945
IDD1
Operating One Bank Active-Read-Precharge Current
972
IDD2P0
Precharge Power-Down Current Slow Exit
180
IDD2P1
IDD2Q
Precharge Power-Down Current Fast Exit
Precharge Quiet Standby Current
540
990
IDD2N
Precharge Standby Current
990
IDD3P
Active Power-Down Current
666
IDD3N
Active Standby Current
1080
IDD4W
Operating Burst Write Current
1395
IDD4R
Operating Burst Read Current
1395
IDD5B
Burst Refresh Current
1755
IDD6
Self Refresh Current: Normal Temperature Range
108
IDD7
Operating Bank Interleave Read Current
3330
Note: IDD current measure method and detail patterns are described on DDR3 component datasheet. Only for reference.
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Speed Bins and CL,tRCD,tRP,tRC and tRAS for Corresponding Bin:
Speed
Bin(CL-tRCD-tRP)
Parameter
CL
tRCD
tRC
tRRD
tCK
tRAS
tRP
tRFC
DDR3-1333
9-9-9
min
9
13.125
49.125
6
1.5
36
13.125
160
Units
tCK
ns
ns
ns
ns
ns
ns
ns
12
12 Page | ||
Seiten | Gesamt 16 Seiten | |
PDF Download | [ ADDR1333C4G9 Schematic.PDF ] |
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