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Teilenummer | CJ3407 |
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Beschreibung | MOSFETS | |
Hersteller | JCST | |
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Gesamt 3 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3407 P-Channel Enhancement Mode Field Effect Transistor
General Description
The CJ3407 uses advanced trench technology to provide excellent
RDS(on) with low gate charge. This device is suitable for use as a load
switch or in PWM applications.
MARKING: 3407
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
RθJA
TJ
Tstg
Value
-30
±20
-4.1
350
357
150
-55~+150
Unit
V
V
A
mW
℃/W
℃
℃
A,Dec,2010
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ CJ3407 Schematic.PDF ] |
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