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Teilenummer | CJ3406 |
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Beschreibung | MOSFETS | |
Hersteller | JCST | |
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Gesamt 2 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3406 N-Channel Enhancement Mode Field Effect Transistor
DESCRIPTION
The CJ3406 use advanced trench technology to provide excellent
RDS(ON) and low gate charge. This device is suitable for use as a
load switch or in PWM applications.
SOT-23
1. GATE
2. SOURCE
3. DRAIN
MARKING: R6
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
Value
30
±20
3.6
15
0.35
357
150
-55~ +150
Unit
V
V
A
A
W
℃/W
℃
℃
A,Dec,2010
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ CJ3406 Schematic.PDF ] |
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