|
|
Teilenummer | CJ3401A |
|
Beschreibung | MOSFETS | |
Hersteller | JCST | |
Logo | ||
Gesamt 3 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401A P-Channel Enhancement Mode Field Effect Transistor
FEATURE
z High dense cell design for extremely low RDS(ON).
z Exceptional on-resistance and maximum DC current capability
MARKING: R1A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
G
D
S
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient (t<5s)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
RθJA
TJ
TSTG
Value
-30
±12
-4.2
400
313
150
-55~+150
Unit
V
V
A
mW
℃/W
℃
℃
A-1,Sep,2013
| ||
Seiten | Gesamt 3 Seiten | |
PDF Download | [ CJ3401A Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
CJ3401 | P-Channel Enhancement Mode MOSFET | ZPSEMI |
CJ3401 | MOSFETS | JCST |
CJ3401-HF | MOSFET ( Transistor ) | Comchip |
CJ3401A | P-Channel Enhancement Mode Field Effect Transistor | ZPSEMI |
CJ3401A | MOSFETS | JCST |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |