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PDF AUIRGR4045D Data sheet ( Hoja de datos )
| Número de pieza | AUIRGR4045D | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD - 97637
AUIRGR4045D
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free, RoHS Compliant
• Automotive Qualified*
AUIRGU4045D
C
G
E
n-channel
VCES = 600V
IC = 6.0A, TC = 100°C
VCE(on) typ. = 1.7V
C
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
E
G
D-Pak
AUIRGR4045D
E
C
I-Pak G
AUIRGU4045D
G
Gate
C
Colletor
E
Emitter
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
VCES
IC@ TC = 25°C
IC@ TC = 100°C
ICM
ILM
IF@TC=25°C
IF@TC=100°C
IFM
VGE
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
cPulsed Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC =25°
PD @ TC =100°
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
eRθJC Junction-to-Case - IGBT
eRθJC Junction-to-Case - Diode
gRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Max.
600
12
6.0
18
24
8.0
4.0
24
± 20
± 30
77
39
-55 to + 175
Units
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
Max.
1.9
6.8
50
110
Units
°C/W
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com
02/14/11
1 page  
20
Top VGE = 18V
VGE = 15V
VGE = 12V
15 VGE = 10V
Bottom VGE = 8.0V
10
5
0
0 2 4 6 8 10
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80µs
10
8
6 ICE = 3.0A
ICE = 6.0A
4 ICE = 12A
2
0
5 10 15
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
10
20
8
ICE = 3.0A
6 ICE = 6.0A
ICE = 12A
4
2
0
5 10 15 20
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
www.irf.com
AUIRGR/U4045D
20
18
16
14
12
10
8
6
4
2
0
0.0
-40°C
25°C
175°C
1.0 2.0
VF (V)
3.0
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
10
8
6 ICE = 3.0A
ICE = 6.0A
4 ICE = 12A
2
0
5 10 15 20
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
18 TJ = 25°C
16 TJ = 175°C
14
12
10
8
6
4
2
0
4 6 8 10 12 14 16
VGE, Gate-to-Emitter Voltage (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5
5 Page 
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
AUIRGR/U4045D
D-Pak Part Marking Information
Part Number
IR Logo
AUGR4045D
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
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