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Número de pieza | 2N6050 | |
Descripción | Silicon PNP Power Transistors | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N6050 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
2N6050
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain
·Complement to type 2N6057
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60 V
VCEO Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current -Continuous
-12 A
ICM Collector Current-Peak
-20 A
IB Base Current
-0.2 A
PC Collector Power Dissipation@TC=25℃ 150
W
TJ Junction Temperature
Tstg Storage Temperature
150
-65~150
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX
1.17
UNIT
℃/W
isc website:www.iscsemi.com
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1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2N6050.PDF ] |
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2N6050 | POWER TRANSISTORS(12A/150W) | Mospec Semiconductor |
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