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D1047 Schematic ( Datenblatt PDF ) - STMicroelectronics

Teilenummer D1047
Beschreibung High power NPN epitaxial planar bipolar transistor
Hersteller STMicroelectronics
Logo STMicroelectronics Logo 

Gesamt 10 Seiten
		
D1047 Datasheet, Funktion
2SD1047
High power NPN epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = 140 V
Typical ft = 20 MHz
Fully characterized at 125 oC
Application
Power supply
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2SD1047
April 2011
Marking
2SD1047
Package
TO-3P
Doc ID 018729 Rev 1
Packaging
Tube
1/10
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D1047 Datasheet, Funktion
Electrical characteristics
Table 5. TO-3P mechanical data
Dim.
A
A1
A2
b
b1
b2
c
D
D1
E
E1
E2
e
L
L1
L2
P
Q
Q1
Min.
4.6
1.45
1.20
0.80
1.80
2.80
0.55
19.70
15.40
5.15
19.50
18.20
3.10
mm
Typ.
1.50
1.40
1
0.60
19.90
13.90
13.60
9.60
5.45
20
3.50
18.40
5
3.80
2SD1047
Max.
5
1.65
1.60
1.20
2.20
3.20
0.75
20.10
15.80
5.75
20.50
18.60
3.30
6/10 Doc ID 018729 Rev 1

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