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PDF RHD5980 Data sheet ( Hoja de datos )

Número de pieza RHD5980
Descripción Octal Bus Transceiver
Fabricantes Cobham Semiconductor 
Logotipo Cobham Semiconductor Logotipo



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No Preview Available ! RHD5980 Hoja de datos, Descripción, Manual

RadHard-by-Design Analog
RHD5980
Octal Bus Transceiver, Bidirectional Voltage Level Shifter
Released Datasheet
Cobham.com/HiRel
March 28, 2016
The most important thing we build is trust
FEATURES
Bidirectional Voltage translator with two separate supply rails.
Radiation performance
- Total dose:
- ELDRS Immune
- SEL Immune
- Neutron Displacement Damage
>1 Mrad(Si); Dose rate = 50-300 rad(Si)/s
>100 MeV-cm2/mg
>1014 neutrons/cm2
Full military temperature range
Designed for aerospace and high reliability space applications
Packaging – Hermetic ceramic SOIC
- 24-pin, .614"L x .300"W x .120"Ht
- Weight - 2.0 grams max
Radiation Hardness Assurance Plan: DLA Certified to MIL-PRF-38534, Appendix G.
GENERAL DESCRIPTION
The RHD5980 is a radiation hardened, Octal Level Shifter in a 24-pin SOIC package. The RHD5980 design
uses specific circuit topology and layout methods to mitigate total ionizing dose effects and single event
latchup. These characteristics make the RHD5980 especially suited for the harsh environment encountered
in Deep Space missions. It is guaranteed operational from -55°C to +125°C. Available screened in
accordance with MIL-PRF-38534 Class K, the RHD5980 is ideal for demanding military and space
applications.
ORGANIZATION AND APPLICATION
The RHD5980 Octal Level Shifter is a radiation hard replacement for the industry standard Bidirectional
Voltage Translators. It is capable of level shifting from the A-to-B or B-to-A input ports for nominal logic
voltages on either port of 5.0 or 3.3 volts.
The RHD5980 can level shift from 5.0V to 3.3V or 3.3V to 5.0V, and also buffer from 5.0V to 5.0V or 3.3V
to 3.3V. Ports A and B can be inputs or outputs depending on the value of DIR_AB_H.
Control inputs are the standard tri-state enable (OE_L active low) and direction control DIR_AB_H where
a HIGH logic steers data from A-to-B and active LOW steers the data from B-to-A.
The control inputs are powered from VCCA and accept inputs at the A bus logic levels (either 3.3V or 5.0V).
All delay parameters are less than 30nS over full -55°C to +125°C military temperature range and logic
levels. All bus and control inputs have Schmitt trigger buffers to implement low-to-high transition at
approximately 60% of the corresponding logic supply and high-to-low transition at approximately 40%
providing considerable noise immunity for slow input signals
The devices will not latch with SEU events to above 100 MeV-cm2/mg. Total dose degradation is minimal
to above 1 Mrad(Si). Displacement damage environments to neutron fluence equivalents in the mid 1014
neutrons per cm2 range are readily tolerated. There is no sensitivity to low-dose rate (ELDRS) effects. SEU
effects are application dependent.
SCD5980
Rev B
1 Cobham Semiconductor Solutions
www.cobham.com/HiRel

1 page




RHD5980 pdf
ORDERING INFORMATION
Model
RHD5980-7
RHD5980- 201-1S
RHD5980- 201-2S
RHD5980- 901-1S
RHD5980- 901-2S
DLA SMD #
-
5962-1222601KXC
5962-1222601KXA
5962H1222601KXC
5962H1222601KXA
Screening
Commercial Flow, +25°C testing only
In accordance with DLA SMD
In accordance with DLA Certified RHA Program Plan to
RHA Level "H", 1 Mrad(Si)
Package
24-pin
SOIC Package
SCD5980
Rev B 3/28/2016
5 Cobham Semiconductor Solutions
www.cobham.com/HiRel

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