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RHD5902 Schematic ( PDF Datasheet ) - Cobham Semiconductor

Teilenummer RHD5902
Beschreibung Quad Operational Amplifier
Hersteller Cobham Semiconductor
Logo Cobham Semiconductor Logo 




Gesamt 9 Seiten
RHD5902 Datasheet, Funktion
RadHard-by-Design Analog
RHD5902
Quad Operational Amplifier, High Speed with Enables
Released Datasheet
Cobham.com/HiRel
March 28, 2016
The most important thing we build is trust
FEATURES
Single power supply operation (3.3V to 5.0V) or dual power supply operation (±1.65 to ±2.5V)
Radiation performance
- Total dose:
- ELDRS Immune
- SEL Immune
- Neutron Displacement Damage
> 1 Mrad(Si); Dose rate = 50-300 rad(Si)/s
> 100 MeV-cm2/mg
> 1014 neutrons/cm2
Unity Gain Bandwidth 35 MHz Typical
Rail-to-Rail input and output range
Enable pin to Enable/Disable amplifiers in pairs.
Short Circuit Tolerant
Full military temperature range
Designed for aerospace and high reliability space applications
Packaging – Hermetic ceramic SOIC
- 16-pin, .417"L x .300"W x .120"Ht
- Weight - 0.8 grams max
Radiation Hardness Assurance Plan: DLA Certified to MIL-PRF-38534, Appendix G.
GENERAL DESCRIPTION
The RHD5902 is a radiation hardened, single supply, high speed quad operational amplifier with enable in a
16-pin SOIC package. The RHD5902 design uses specific circuit topology and layout methods to mitigate total
ionizing dose effects and single event latchup. These characteristics make the RHD5902 especially suited for the
harsh environment encountered in Deep Space missions. It is guaranteed operational from -55°C to +125°C.
Available screened in accordance with MIL-PRF-38534 Class K, the RHD5902 is ideal for demanding military
and space applications.
ORGANIZATION AND APPLICATION
The RHD5902 amplifiers are capable of rail-to-rail input and outputs. Performance characteristics listed are for
general purpose operational 5V CMOS amplifier applications. The amplifiers will drive substantial resistive or
capacitive loads and are unity gain stable under normal conditions. Resistive loads in the low kohm range can be
handled without gain derating and capacitive loads of several nF can be tolerated. CMOS device drive has a
negative temperature coefficient and the devices are therefore inherently tolerant to momentary shorts, although
on chip thermal shutdown is not provided. All inputs and outputs are diode protected.
The devices will not latch with SEU events to above 100 MeV-cm2/mg. Total dose degradation is minimal to
above 1 Mrad(Si). Displacement damage environments to neutron fluence equivalents in the mid 1014 neutrons
per cm2 range are readily tolerated. There is no sensitivity to low-dose rate (ELDRS) effects. SEU effects are
application Dependant.
The RHD5902 is configured with enable/disable control. Pairs of amplifiers are put in a power-down condition
with their outputs in a high impedance state. Several useful operational amplifier configurations are supported
where more than one amplifier can feed an output with others disabled.
SCD5902
Rev C
1 Cobham Semiconductor Solutions
www.cobham.com/HiRel






RHD5902 Datasheet, Funktion
APPLICATION NOTE 3:
DIFFERENTIAL INPUT AMPLIFIER
Differential Input Amplifier
VOUT
=
V2
R-----3--R--+---4--R-----4-
 1
+
RR-----21-
V1
RR-----21-
R1
V1
R2
VCC
R3
V2
VEE
EN
R4
VOUT
APPLICATION NOTE 4:
MULTIPLE AMPLIFIERS
Multiple Amplifiers - Selectable Output
V1
ENV1
V2
+5V
A/B
C/D
VOUT
SCD5902
Rev C 3/28/2016
Note: Package and lid are electrically
isolated from signal pads.
FIGURE 4: PACKAGE OUTLINE
6
Cobham Semiconductor Solutions
www.cobham.com/HiRel

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