|
|
PDF AP6N090N Data sheet ( Hoja de datos )
| Número de pieza | AP6N090N | |
| Descripción | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AP6N090N (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Advanced Power
Electronics Corp.
AP6N090N
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Package Outline
D
▼ Surface Mount Device
▼ RoHS Compliant & Halogen-Free
SOT-23S G
S
Description
AP6N090 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
The SOT-23S package is widely preferred for commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
BVDSS
RDS(ON)
ID
60V
90mΩ
2.5A
D
G
S
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
60 V
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20
2.5
2
10
1.25
-55 to 150
-55 to 150
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
100
Unit
℃/W
1
201508061
1 page  
AP6N090N
2
I D =1mA
1.6
1.2
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
Temperature
500
T j =25 o C
400
300
.
200
4.5V
100 V GS =10V
0
0 3 6 9 12
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
1.6
1.2
0.8
0.4
0
0 50 100
T A , Ambient Temperature( o C)
Fig 14. Total Power Dissipation
150
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP6N090N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AP6N090N | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Advanced Power Electronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |