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PDF PE42524 Data sheet ( Hoja de datos )
| Número de pieza | PE42524 | |
| Descripción | SPDT RF Switch | |
| Fabricantes | Peregrine Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PE42524 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
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PE42524
Document Category: Product Specification
UltraCMOS® SPDT RF Switch, 10 MHz–40 GHz
Features
• Wideband support up to 40 GHz
• High port to port isolation
▪ 48 dB @ 26.5 GHz
▪ 39 dB @ 35 GHz
▪ 33 dB @ 40 GHz
• Excellent linearity performance
▪ P1dB of 31.5 dBm @ 26.5 GHz
▪ P1dB of 28.0 dBm @ 35 GHz
▪ IIP3 of 50 dBm @ 13.5 GHz
• Fast RF Trise/Tfall time of 55 ns
• Low insertion loss
▪ 1.8 dB @ 26.5 GHz
▪ 3.1 dB @ 35 GHz
• Flip-chip die
Applications
• Test and measurement
• Microwave backhaul
• Radar
• Military communications
Figure 1 • PE42524 Functional Diagram
RFC
RF1
ESD
V1 V2
RF2
Product Description
The PE42524 is a HaRP™ technology-enhanced reflective SPDT RF switch die that supports a wide frequency
range from 10 MHz to 40 GHz. This wideband flip-chip switch delivers high isolation performance, excellent
linearity and low insertion loss, making this device ideal for test and measurement (T&M), microwave backhaul,
radar and military communications (mil-comm) applications. At 30 GHz, the PE42524 exhibits 17 dB active port
return loss, 47 dB isolation and 2.2 dB insertion loss. No blocking capacitors are required if DC voltage is not
present on the RF ports.
The PE42524 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-on-insulator
(SOI) technology on a sapphire substrate.
©2014-2015, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification
www.psemi.com
DOC-48614-4 – (12/2015)
1 page  
PE42524
SPDT RF Switch
Table 3 • PE42524 Electrical Specifications
Parameter
Path
Condition
Min Typ Max Unit
Switching time
50% CTRL to 90% or 10% RF
Notes:
1) Test system limited.
2) The input 1dB compression point is a linearity figure of merit. Refer to Table 2 for the RF input power (50Ω).
3) Measured with a 3.5 ns rise time, –3.3 / +3.3V pulse and 500 MHz bandwidth.
225 304
ns
Control Logic
Table 4 provides the control logic truth table for the
PE42524. States 2 and 3 are used in normal switching
operations.
Table 4 • Truth Table for PE42524
V1 V2 RF1
–3.3V
–3.3V
+3.3V
+3.3V
–3.3V
+3.3V
–3.3V
+3.3V
OFF
OFF
ON
ON
RF2
OFF
ON
OFF
ON
State
1
2
3
4
Figure 2 • Power De-rating Curve (10 MHz–40 GHz) @ 25 °C and 85 °C Ambient (50Ω)
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
0.01
P1 dB Compression / Abs. Max. RF Input Power @ 25°C & 85°C Ambient
Max. RF Input Power, Pulsed @ 25°C & 85°C Ambient
Max. RF Input Power, CW @ 25°C & 85°C Ambient
5.01
10.01
15.01
20.01
25.01
30.01
35.01
40.01
Frequency (GHz)
DOC-48614-4 – (12/2015)
www.psemi.com
Page 5
5 Page 
PE42524
SPDT RF Switch
Recommended Evaluation Setup
The PE42524 s-parameter data and input 1dB compression point from 22–40 GHz (Table 3 and Figure 3–
Figure 12) were taken using grounded co-planar waveguide (CPWG) on the alumina substrate (shown in
Figure 13) and RF probes.
The PE42524 2nd harmonic, 2fo rejection, input 1dB compression point below 18 GHz, input IP3 measure-
ments, settling time and switching time (Table 3) were taken on a PCB using 2.92 mm connectors.
Bypass capacitors are not required.
PCB using 2.92 mm connectors.pacitors are not required
Figure 13 • Alumina Substrate Board for PE42524
Alumina substrate board
Thickness: 0.01 in.
εR = 9.9
RFC
PE42524
RF2 DIE
RF1
V1 V2
DOC-48614-4 – (12/2015)
www.psemi.com
Page 11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PE42524.PDF ] | |
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