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PDF PE42520 Data sheet ( Hoja de datos )
| Número de pieza | PE42520 | |
| Descripción | SPDT RF Switch | |
| Fabricantes | Peregrine Semiconductor | |
| Logotipo |  |
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Product Description
The PE42520 SPDT absorptive RF switch is designed for
use in Test/ATE and other high performance wireless
applications. This broadband general purpose switch
maintains excellent RF performance and linearity from 9
kHz through 13 GHz. This switch is a pin-compatible
upgraded version of PE42552 with higher power handling
of 36 dBm continuous wave (CW) and 38 dBm
instantaneous power in 50Ω @ 8 GHz. The PE42520
exhibits high isolation, fast settling time, and is offered in a
3x3 mm QFN package.
The PE42520 is manufactured on Peregrine’s
UltraCMOS® process, a patented variation of silicon-on-
insulator (SOI) technology on a sapphire substrate,
offering the performance of GaAs with the economy and
integration of conventional CMOS.
Figure 1. Functional Diagram
Product Specification
PE42520
UltraCMOS® SPDT RF Switch
9 kHz - 13 GHz
Features
HaRP™ technology enhanced
Fast settling time
No gate and phase lag
No drift in insertion loss and phase
High power handling @ 8 GHz in 50Ω
36 dBm CW
38 dBm instantaneous power
26 dBm terminated port
High linearity
66 dBm IIP3
Low insertion loss
0.8 dB @ 3 GHz
0.9 dB @ 10 GHz
2.0 dB @ 13 GHz
High isolation
45 dB @ 3 GHz
31 dB @ 10 GHz
18 dB @ 13 GHz
ESD performance
4kV HBM on RF pins to GND
2.5kV HBM on all pins
1kV CDM on all pins
DOC-50572
Figure 2. Package Type
16-lead 3x3 mm QFN
Document No. DOC-12714-4 | www.psemi.com
©2012-2014 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 16
1 page  
PE42520
Product Specification
Figure 4. Power De-rating Curve for 9 kHz – 10 MHz (50Ω)
40
35
30 Max. RF Input Power, CW and Pulsed, (‐40°C to +85°C Ambient)
25
20
15
10
5
0
‐5
1
10 100 1000
Frequency (kHz)
10000
Document No. DOC-12714-4 | www.psemi.com
©2012-2014 Peregrine Semiconductor Corp. All rights reserved.
Page 5 of 16
5 Page 
PE42520
Product Specification
Typical Performance Data @ 25°C and VDD = 3.4V unless otherwise specified
Figure 22. Isolation vs. Temp
(RF1–RF2, RF1 Active)
Figure 23. Isolation vs. VDD
(RF1–RF2, RF1 Active)
Figure 24. Isolation vs. Temp
(RF2–RF1, RF2 Active)
Figure 25. Isolation vs. VDD
(RF2–RF1, RF2 Active)
Document No. DOC-12714-4 | www.psemi.com
©2012-2014 Peregrine Semiconductor Corp. All rights reserved.
Page 11 of 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PE42520.PDF ] | |
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