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Teilenummer | EKI10198 |
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Beschreibung | N Channel Trench Power MOSFET | |
Hersteller | SANKEN | |
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Gesamt 9 Seiten 100 V, 47 A, 13.2 mΩ Low RDS(ON)
N ch Trench Power MOSFET
EKI10198
Features
V(BR)DSS --------------------------------100 V (ID = 100 µA)
ID ---------------------------------------------------------- 47 A
RDS(ON) -------- 18.4 mΩ max. (VGS = 10 V, ID = 23.4 A)
Qg------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Package
TO-220
(4)
D
(1) (2) (3)
GDS
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(2)(4)
G(1)
S(3)
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
IDM
IS
ISM
Single Pulse Avalanche Energy
EAS
Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
IAS
PD
TJ
TSTG
Test conditions
TC = 25 °C
PW ≤ 100µs
Duty cycle ≤ 1 %
PW ≤ 100µs
Duty cycle ≤ 1 %
VDD = 50 V, L = 1 mH,
IAS =11.2 A, unclamped,
RG = 4.7 Ω
Refer to Figure 1
TC = 25 °C
Rating
100
± 20
47
94
47
94
126
23.3
116
150
− 55 to 150
Unit
V
V
A
A
A
A
mJ
A
W
°C
°C
EKI10198-DS Rev.1.3
May. 29, 2014
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
1
EKI10198
Package Outline
TO-220
1.52±0.10
0.08±0.10
NOTES:
1) Dimension is in millimeters
2) Pb-free. Device composition compliant with the RoHS directive
Marking Diagram
YMW BAA
EKI×××××
Lot Number
Y is the Last digit of the year (0 to 9)
M is the Month (1 to 9, O, N or D)
W is the Week (1st to 5th week of every month)
B expresses Pb free pins
A is the suffix No.
Part Number
EKI10198-DS Rev.1.3
May. 29, 2014
SANKEN ELECTRIC CO.,LTD.
6
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ EKI10198 Schematic.PDF ] |
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