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PDF AP9932GM Data sheet ( Hoja de datos )
| Número de pieza | AP9932GM | |
| Descripción | 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP9932GM
Pb Free Plating Product
2N AND 2P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Full Bridge Application on
LCD Monitor Inverter
Description
P2G
N2D/P2D
P1S/P2S
P1G
SO-8
N2G
N1S/N2S
N1D/P1D
N1G
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
30V
40mΩ
4.3A
-30V
70mΩ
-3.3A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
P1S P2S
P1G P2G
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
P1N1D
P2N2D
N1G
N1S N2S
Rating
N-channel P-channel
30 -30
± 12 ± 12
4.3 -3.3
3.4 -2.6
20 -20
1.38
0.01
-55 to 150
-55 to 150
N2G
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Max.
Value
90
Unit
℃/W
Data and specifications subject to change without notice
200920041
1 page  
N-Channel
12
ID=4A
10 V DS = 24 V
8
6
4
2
0
0 4 8 12 16 20
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off) tf
AP9932GM
f=1.0MHz
1000
C iss
C oss
100
C rss
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 186℃/W
0.001
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP9932GM.PDF ] | |
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