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DF2S6.8UCT Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer DF2S6.8UCT
Beschreibung ESD Protection Diodes
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 7 Seiten
DF2S6.8UCT Datasheet, Funktion
ESD Protection Diodes Silicon Epitaxial Planar
DF2S6.8UCT
DF2S6.8UCT
1. Applications
• ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
2. Packaging and Internal Circuit
1: Cathode
2: Anode
CST2
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
VESD
±8
kV
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2010-04
1 2014-04-15
Rev.3.0






DF2S6.8UCT Datasheet, Funktion
Package Dimensions
DF2S6.8UCT
Unit: mm
Weight: 0.7 mg (typ.)
TOSHIBA: 1-1P1S
Nickname: CST2
Package Name(s)
6
2014-04-15
Rev.3.0

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