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DF2B7SL Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer DF2B7SL
Beschreibung ESD Protection Diodes
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 8 Seiten
DF2B7SL Datasheet, Funktion
ESD Protection Diodes Silicon Epitaxial Planar
DF2B7SL
DF2B7SL
1. Applications
• ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
2. Packaging and Internal Circuit
1: Pin 1
2: Pin 2
SL2
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Note
Rating
Unit
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
Electrostatic discharge voltage(IEC61000-4-2)(Air)
VESD
(Note 1)
±17
±20
kV
kV
Peak pulse power
PPK 45 W
Peak pulse current
Junction temperature
IPP (Note 2)
Tj
3
150
A
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to IEC61000-4-5.
Start of commercial production
2014-10
1 2015-04-03
Rev.5.0






DF2B7SL Datasheet, Funktion
10. ESD Clamp Waveform (Note)
DF2B7SL
Fig. 10.1 +8 kV
Fig. 10.2 -8 kV
Fig. 10.3 IEC61000-4-2 (Contact)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
6 2015-04-03
Rev.5.0

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