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DN2530 Schematic ( PDF Datasheet ) - Microchip

Teilenummer DN2530
Beschreibung Vertical DMOS FET
Hersteller Microchip
Logo Microchip Logo 




Gesamt 13 Seiten
DN2530 Datasheet, Funktion
DN2530
N-Channel, Depletion-Mode, Vertical DMOS FET
Features
• High-input impedance
• Low-input capacitance
• Fast switching speeds
• Low on-resistance
• Free from secondary breakdown
• Low input and output leakage
Applications
• Normally-on switches
• Solid state relays
• Converters
• Linear amplifiers
• Constant current sources
• Power supply circuits
• Telecom
Description
The DN2530 is a low-threshold, depletion-mode, nor-
mally-on transistor that utilizes an advanced vertical
DMOS structure and a well-proven silicon-gate manu-
facturing process. This combination produces a device
with the power-handling capabilities of bipolar transis-
tors, plus the high-input impedance and positive-tem-
perature coefficient inherent in Metal-Oxide
Semiconductor (MOS) devices. Characteristic of all
MOS structures, this device is free from thermal run-
away and thermally-induced secondary breakdown.
Vertical DMOS Field-Effect Transistors (FETs) are ide-
ally suited to a wide range of switching and amplifying
applications where high breakdown-voltage, high-input
impedance, low-input capacitance, and fast switching
speeds are desired.
Package Types
SOURCE
DRAIN
GATE
TO-92
See Table 2-1 for pin information
DRAIN
SOURCE
DRAIN
GATE
TO-243AA (SOT-89)
2016 Microchip Technology Inc.
DS20005451A-page 1






DN2530 Datasheet, Funktion
DN2530
BVDSS Variation with Temperature
1.10
VGS = -5V
ID = 100mA
1.05
1.00
0.95
0.90
0.85
-50
0 50 100 150
Tj (°C)
Transfer Characteristics
1.0
VDS = 10V
0.8 TA = -55°C
25°C
0.6 125°C
0.4
0.2
0
-2
-1 0
VGS (Volts)
1
2
Capacitance Vs. Drain-to-Source Voltage
200
f = 1MHz
VGS = -10V
150 CISS
100
On-Resistance vs. Drain Current
50
VGS = 0V
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1.0
ID (amps)
VGS(OFF) and RDS(ON) Variation with Temperature
2.5
2
RDS(ON) @ ID = 150mA
1.5
VGS(OFF) @ 10mA
1
0.5
0
-50 0
50 100 150
Tj (°C)
Gate Drive Dynamic Characteristics
15
10
5
VDS = 40V
VDS = 20V
250pF
50
COSS
CRSS
0
0 10
20
VDS (Volts)
30
40
0
152pf
-5
0123
4
QC (Nanocoulombs)
FIGURE 3-3:
Typical Performance Curves (continued)
5
DS20005451A-page 6
2016 Microchip Technology Inc.

6 Page









DN2530 pdf, datenblatt
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ISBN: 978-1-5224-0250-3
DS20005451A-page 12
2016 Microchip Technology Inc.

12 Page





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