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PESD3V3L5UK Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PESD3V3L5UK
Beschreibung Low capacitance unidirectional fivefold ESD protection diode arrays
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 15 Seiten
PESD3V3L5UK Datasheet, Funktion
PESD3V3L5UK; PESD5V0L5UK
Low capacitance unidirectional fivefold ESD protection diode
arrays
Rev. 1 — 25 August 2010
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode
arrays in a leadless ultra small SOT891 Surface-Mounted Device (SMD) plastic package
designed to protect up to five unidirectional signal lines from the damage caused by ESD
and other transients.
1.2 Features and benefits
„ ESD protection of up to five lines
„ Low diode capacitance
„ Max. peak pulse power: PPP = 30 W
„ Low clamping voltage: VCL = 9.5 V
„ AEC-Q101 qualified
„ Very low leakage current: IRM = 0.5 μA
„ ESD protection up to 20 kV
„ IEC 61000-4-2; level 4 (ESD)
„ IEC 61000-4-5 (surge); IPP = 3.2 A
1.3 Applications
„ Computers and peripherals
„ Audio and video equipment
„ Cellular handsets and accessories
„ Communication systems
„ Portable electronics
„ Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
PESD3V3L5UK
PESD5V0L5UK
Cd diode capacitance
PESD3V3L5UK
f = 1 MHz; VR = 0 V
PESD5V0L5UK
Min Typ Max Unit
- - 3.3 V
- - 5.0 V
- 20 24 pF
-
18.5 22
pF






PESD3V3L5UK Datasheet, Funktion
NXP Semiconductors
PESD3V3L5UK; PESD3V3L5UK
Low capacitance unidirectional fivefold ESD protection diode arrays
102
PPP
(W)
10
006aac374
1.2
PPP
PPP(25°C)
0.8
0.4
001aaa633
1
1 10 102 103 104
tp (μs)
0
0 50 100 150 200
Tj (°C)
Fig 3.
Tamb = 25 °C
Peak pulse power as a function of exponential
pulse duration; typical values
Fig 4.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
25.0
Cd
(pF)
20.0
15.0
10.0
5.0
006aac375
10
IRM
IRM(25°C)
(1)
1 (1)
(2)
(2)
006aac376
(2)
(1)
0.0
0.0 2.0 4.0 6.0
VR (V)
f = 1 MHz; Tamb = 25 °C
(1) PESD3V3L5UK
(2) PESD5V0L5UK
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
101
75
25
0
25 50 75
Tj (°C)
(1) PESD3V3L5UK
(2) PESD5V0L5UK
Fig 6.
Relative variation of reverse current as a
function of junction temperature; typical
values
PESD3V3L5UK_PESD5V0L5UK
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
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PESD3V3L5UK pdf, datenblatt
NXP Semiconductors
PESD3V3L5UK; PESD3V3L5UK
Low capacitance unidirectional fivefold ESD protection diode arrays
12. Revision history
Table 10. Revision history
Document ID
Release date
PESD3V3L5UK_
PESD5V0L5UK v.1
20100825
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PESD3V3L5UK_PESD5V0L5UK
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
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