|
|
Teilenummer | PESD3V3L5UK |
|
Beschreibung | Low capacitance unidirectional fivefold ESD protection diode arrays | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 15 Seiten PESD3V3L5UK; PESD5V0L5UK
Low capacitance unidirectional fivefold ESD protection diode
arrays
Rev. 1 — 25 August 2010
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode
arrays in a leadless ultra small SOT891 Surface-Mounted Device (SMD) plastic package
designed to protect up to five unidirectional signal lines from the damage caused by ESD
and other transients.
1.2 Features and benefits
ESD protection of up to five lines
Low diode capacitance
Max. peak pulse power: PPP = 30 W
Low clamping voltage: VCL = 9.5 V
AEC-Q101 qualified
Very low leakage current: IRM = 0.5 μA
ESD protection up to 20 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 3.2 A
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Communication systems
Portable electronics
Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
PESD3V3L5UK
PESD5V0L5UK
Cd diode capacitance
PESD3V3L5UK
f = 1 MHz; VR = 0 V
PESD5V0L5UK
Min Typ Max Unit
- - 3.3 V
- - 5.0 V
- 20 24 pF
-
18.5 22
pF
NXP Semiconductors
PESD3V3L5UK; PESD3V3L5UK
Low capacitance unidirectional fivefold ESD protection diode arrays
102
PPP
(W)
10
006aac374
1.2
PPP
PPP(25°C)
0.8
0.4
001aaa633
1
1 10 102 103 104
tp (μs)
0
0 50 100 150 200
Tj (°C)
Fig 3.
Tamb = 25 °C
Peak pulse power as a function of exponential
pulse duration; typical values
Fig 4.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
25.0
Cd
(pF)
20.0
15.0
10.0
5.0
006aac375
10
IRM
IRM(25°C)
(1)
1 (1)
(2)
(2)
006aac376
(2)
(1)
0.0
0.0 2.0 4.0 6.0
VR (V)
f = 1 MHz; Tamb = 25 °C
(1) PESD3V3L5UK
(2) PESD5V0L5UK
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
10−1
−75
−25
0
25 50 75
Tj (°C)
(1) PESD3V3L5UK
(2) PESD5V0L5UK
Fig 6.
Relative variation of reverse current as a
function of junction temperature; typical
values
PESD3V3L5UK_PESD5V0L5UK
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
6 of 15
6 Page NXP Semiconductors
PESD3V3L5UK; PESD3V3L5UK
Low capacitance unidirectional fivefold ESD protection diode arrays
12. Revision history
Table 10. Revision history
Document ID
Release date
PESD3V3L5UK_
PESD5V0L5UK v.1
20100825
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PESD3V3L5UK_PESD5V0L5UK
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
12 of 15
12 Page | ||
Seiten | Gesamt 15 Seiten | |
PDF Download | [ PESD3V3L5UK Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
PESD3V3L5UF | Low capacitance unidirectional fivefold ESD protection diode arrays | NXP Semiconductors |
PESD3V3L5UK | Low capacitance unidirectional fivefold ESD protection diode arrays | NXP Semiconductors |
PESD3V3L5UV | (PESD3V3L5UV / PESD5V0L5UV) Low capacitance 5-fold ESD protection diode arrays | NXP Semiconductors |
PESD3V3L5UV | Low capacitance unidirectional fivefold ESD protection diode arrays | NXP Semiconductors |
PESD3V3L5UY | (PESD3V3L5UY / PESD5V0L5UY) Low capacitance 5-fold ESD protection diode arrays | NXP Semiconductors |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |