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Teilenummer | GDSSF2316E |
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Beschreibung | MOSFET ( Transistor ) | |
Hersteller | GOOD-ARK | |
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Gesamt 4 Seiten GDSSF2316E
GENERAL FEATURES
● VDS = 20V,ID = 7A
RDS(ON) < 35mΩ @ VGS=2.5V
RDS(ON) < 30mΩ @ VGS=3.1V
RDS(ON) < 24mΩ @ VGS=4V
RDS(ON) < 23mΩ @ VGS=4.5V
ESD Rating:2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
Application
●Battery protection
●Load switch
●Power management
Pin Assignment
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2316E
SSF2316E
DFN3×3-8L
-
Tape width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±12
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID 7
IDM 40
Maximum Power Dissipation
PD 1.4
Operating Junction and Storage Temperature Range
TJ,TSTDGFN3×3-8L B-O5T5TTOoM15V0IEW
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83 ℃/W
Suzhou Goodark Electronics Co., Ltd
Version 1.0
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ GDSSF2316E Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
GDSSF2316E | MOSFET ( Transistor ) | GOOD-ARK |
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