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Número de pieza | CHA7010 | |
Descripción | X-band GaInP HBT High Power Amplifier | |
Fabricantes | United Monolithic Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CHA7010 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! CHA7010
RoHS COMPLIANT
X-band GaInP HBT High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA7010 is a monolithic two-stage
GaAs high power amplifier designed for X
band applications.
This device is manufactured using a GaInP
HBT process, including, via holes through
the substrate and air bridges. A nitride
layer protects the transistors and the
passive components. Special heat removal
techniques are implemented to guarantee
high reliability.
To simplify the assembly process:
• the backside of the chip is both RF and
DC grounded
• bond pads and back side are gold
plated for compatibility with eutectic die
attach method and thermosonic or
thermocompression bonding process.
Vctr Vc
Main Features
10W output power
High gain : > 18dB @ 10GHz
High PAE : > 35% @ 10GHz
On-chip bias control
Linear collector current control
High impedance interface for pulse
mode
Temperature compensated
Chip size: 4.74 x 4.36 x 0.1 mm
Vctr Vc
Input
Matching
Network
Inter-stage
Output
Combiner
Vctr Vc
Main Characteristics
Tamb = +25°C
Vctr Vc
Symbol
Parameter
Min Typ
F_op Operating frequency range
8.4 9.4
P_sat Saturated output power
10
P_1dBc Output power @ 1dBc
8
G_lin Linear gain
18
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Max
10.4
Unit
GHz
W
W
dB
Ref. : DSCHA70104054 - 23 Feb 04
1/7 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
1 page X-band High Power Amplifier
Chip Mechanical Data and Pin references
CHA7010
Chip thickness = 100 +/- 10
HF pads (12, 24) = 118 x 68
DC pads (3, 8, 16, 21) = 96 x 96
DC pads (5, 10, 14, 19) = 288 x 96
Pin number
Pin name
24 IN
1, 2, 7, 17, 22, 23
3, 8, 16, 21
Vctr
4, 6, 9, 11, 13, 15, 18, 20
GND
5, 10, 14, 19
Vc
12 OUT
Description
Input RF port
NC
Collector control current port
Ground (NC)
Power supply voltage
Output RF port
Ref. DSCHA70104054 - 23 Feb 04
5/7
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet CHA7010.PDF ] |
Número de pieza | Descripción | Fabricantes |
CHA7010 | X-band GaInP HBT High Power Amplifier | United Monolithic Semiconductors |
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