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Teilenummer | CJS8810-HF |
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Beschreibung | N-Channel MOSFET | |
Hersteller | Comchip | |
Logo | ||
Gesamt 5 Seiten MOSFET
CJS8810-HF
N-Channel
RoHS Device
Halogen Free
Features
- Uses advanced trench technology.
- Excellent RDS(ON) and low gate charge.
Mechanical data
- Case: TSSOP8, molded plastic.
Circuit diagram
D1/D2 S2 S2 G2
8 765
1
4
TSSOP8
0.122(3.10)
0.114(2.90)
8
5
0.047(1.20)
MAX.
8765
0.258(6.55)
0.246(6.25)
0.177(4.50)
0.169(4.30)
1234
1 234
D1/D2 S1 S1 G1
V(BR)DSS
20V
RDS(on) MAX
20mΩ@10V
22mΩ@4.5V
24mΩ@3.8V
26mΩ@2.5V
35mΩ@1.8V
ID
7A
0.012(0.30)
0.007(0.19)
0.026(0.65)
BSC.
0.008(0.20)
0.004(0.09)
0.028(0.70)
0.020(0.50)
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-source voltage
Gate-source voltage
VDS 20 V
VGS ±12 V
Continuous drain current
ID 7 A
Pulsed drain current (Note 1)
IDM 30 A
Total power dissipation (Note 2)
PD 0.7 W
Thermal resistance from junction to ambient
RθJA
125 °C/W
Junction temperature range
TJ 150 °C
Storage temperature range
TSTG
-55 to +150
°C
Lead temperature for soldering purposes(1/8’’ from case for 10s) TL
260
Note: 1. Repetitive rating:Pulse width limited by junction temperature.
Note: 2. Device mounted on FR4 substrate pcb board 2 oz copper with minimum recommended pad layout.
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR15
Comchip Technology CO., LTD.
°C
REV: A
Page 1
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ CJS8810-HF Schematic.PDF ] |
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