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PDF 8810 Data sheet ( Hoja de datos )

Número de pieza 8810
Descripción Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Fabricantes Tuofeng Semiconductor　
Logotipo Tuofeng Semiconductor Logotipo



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No Preview Available ! 8810 Hoja de datos, Descripción, Manual

Shenzhen Tuofeng Semiconductor Technology Co., Ltd
8810
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The 8810 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
Standard Product 8810 is Pb-free (meets ROHS & Sony 259
specifications). 8810 is electrically identical.
Features
VDS (V) = 20V
ID = 6A (V GS = 4.5V)
RDS(ON) < 22mΩ (VGS = 4.5V)
RDS(ON) < 30mΩ (VGS = 2.5V)
ESD Rating: 2000V HBM
D1/D2
S1
S1
G1
TSSOP-8
Top View
18
27
36
45
D1/D2
S2
S2
G2
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current A
TA=25°C
ID
Pulsed Drain Current B
IDM
Power Dissipation A TA=25°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±8
6
30
1.5
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
64
89
53
Max
83
120
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W

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